Research on radioactive sensitive PMOS device

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	345
Number of pages	1
Journal	Dianzi Qijian/Journal of Electron Devices
Volume	25
Issue number	4
State	Published - Dec 2002

Cite this

@article{4c6b3e08981344a08c630eaa3706ea68,

title = "Research on radioactive sensitive PMOS device",

author = "Deying Chen and Zhenbo Cai and Yanfeng Jiang and Xu Zhang and Cheng Wang and Lujia Fan",

year = "2002",

month = dec,

language = "英语",

volume = "25",

pages = "345",

journal = "Dianzi Qijian/Journal of Electron Devices",

issn = "1005-9490",

publisher = "Southeast University",

number = "4",

}

TY - JOUR

T1 - Research on radioactive sensitive PMOS device

AU - Chen, Deying

AU - Cai, Zhenbo

AU - Jiang, Yanfeng

AU - Zhang, Xu

AU - Wang, Cheng

AU - Fan, Lujia

PY - 2002/12

Y1 - 2002/12

UR - https://www.scopus.com/pages/publications/0036959779

M3 - 文章

AN - SCOPUS:0036959779

SN - 1005-9490

VL - 25

SP - 345

JO - Dianzi Qijian/Journal of Electron Devices

JF - Dianzi Qijian/Journal of Electron Devices

IS - 4

ER -