TY - GEN
T1 - Reliability analysis of memories suffering MBUs for the effect of negative bias temperature instability
AU - Liu, Shanshan
AU - Xiao, Liyi
AU - Cao, Xuebing
AU - Mao, Zhigang
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/2/16
Y1 - 2017/2/16
N2 - In this paper, the effect of negative bias temperature instability (NBTI) on MBUs sensitivity of 65 nm bulk technology memories is analyzed and simulated by Geant4. A MTTF reliability model including NBTI stress time is proposed for memories protected by error correction codes (ECCs). Both cases of scrubbing and nonscrubbing are considered. By using the proposed model, the predicted MTTF results align well with the simulation MTTF results in the radiation environment.
AB - In this paper, the effect of negative bias temperature instability (NBTI) on MBUs sensitivity of 65 nm bulk technology memories is analyzed and simulated by Geant4. A MTTF reliability model including NBTI stress time is proposed for memories protected by error correction codes (ECCs). Both cases of scrubbing and nonscrubbing are considered. By using the proposed model, the predicted MTTF results align well with the simulation MTTF results in the radiation environment.
UR - https://www.scopus.com/pages/publications/85015341898
U2 - 10.1109/ASPDAC.2017.7858301
DO - 10.1109/ASPDAC.2017.7858301
M3 - 会议稿件
AN - SCOPUS:85015341898
T3 - Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC
SP - 87
EP - 92
BT - 2017 22nd Asia and South Pacific Design Automation Conference, ASP-DAC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 22nd Asia and South Pacific Design Automation Conference, ASP-DAC 2017
Y2 - 16 January 2017 through 19 January 2017
ER -