Relative intensity noise properties of quantum dot lasers

  • Jianan Duan*
  • , Xing Guang Wang
  • , Yue Guang Zhou
  • , Cheng Wang
  • , Frédéric Grillot
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we theoretically investigate the relative intensity noise (RIN) properties of quantum dot (QD) lasers through a rate equation model including the Langevin noises and the contribution from the off resonance energy levels. It is shown that the carrier noise significantly enhances the RIN which can be further reduced by properly controlling the energy separation between the first excited and the ground states. In addition, simulations also unveil that the RIN of QD lasers is rather temperature independent which is of prime importance for the development of power efficient light sources. Overall, these results indicate that QD lasers are excellent candidates for the realization of ultra-low noise oscillators hence being advantageous for fiber optics communication networks, short reach optical interconnects and integrated photonics systems.

Original languageEnglish
Title of host publicationSemiconductor Lasers and Applications VIII
EditorsWerner H. Hofmann, Ning Hua Zhu
PublisherSPIE
ISBN (Electronic)9781510622227
DOIs
StatePublished - 2018
Externally publishedYes
EventSemiconductor Lasers and Applications VIII 2018 - Beijing, China
Duration: 12 Oct 201813 Oct 2018

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10812
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSemiconductor Lasers and Applications VIII 2018
Country/TerritoryChina
CityBeijing
Period12/10/1813/10/18

Keywords

  • Quantum dots
  • Relative intensity noise
  • Semiconductor lasers

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