Reduction of crystallization temperature of the Aurivillius phase in Nd-doped SrBi2Ta2O9 thin films via substrate bias

Yibin Li; Sam Zhang; Thirumany Sritharan; Xiaodong He; Weidong Fei

doi:10.1016/j.tsf.2008.10.059

Reduction of crystallization temperature of the Aurivillius phase in Nd-doped SrBi₂Ta₂O₉ thin films via substrate bias

Yibin Li^*
, Sam Zhang
, Thirumany Sritharan
, Xiaodong He
, Weidong Fei

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Nd-doped SrBi₂Ta₂O₉ films were sputtered on Pt/Ta/SiO₂/Si substrates under various substrate biases. The radio frequency bias results in the reduction of the Aurivillius phase crystallization temperature. At 48 W, the crystallization temperature of film is lowered at a magnitude of about 80 °C. When the bias further increases, Aurivillius phase formation is suppressed due to too deficient Bi in film. The film deposited at 48 W after annealing at 670 °C shows ferroelectric characteristics. The remnant polarization of the films increases as the annealing temperature is increased.

Original language	English
Pages (from-to)	2633-2637
Number of pages	5
Journal	Thin Solid Films
Volume	517
Issue number	8
DOIs	https://doi.org/10.1016/j.tsf.2008.10.059
State	Published - 27 Feb 2009
Externally published	Yes

Keywords

Crystallization temperature
SBT thin film
Substrate bias

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10.1016/j.tsf.2008.10.059

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title = "Reduction of crystallization temperature of the Aurivillius phase in Nd-doped SrBi2Ta2O9 thin films via substrate bias",

abstract = "Nd-doped SrBi2Ta2O9 films were sputtered on Pt/Ta/SiO2/Si substrates under various substrate biases. The radio frequency bias results in the reduction of the Aurivillius phase crystallization temperature. At 48 W, the crystallization temperature of film is lowered at a magnitude of about 80 °C. When the bias further increases, Aurivillius phase formation is suppressed due to too deficient Bi in film. The film deposited at 48 W after annealing at 670 °C shows ferroelectric characteristics. The remnant polarization of the films increases as the annealing temperature is increased.",

keywords = "Crystallization temperature, SBT thin film, Substrate bias",

author = "Yibin Li and Sam Zhang and Thirumany Sritharan and Xiaodong He and Weidong Fei",

year = "2009",

month = feb,

day = "27",

doi = "10.1016/j.tsf.2008.10.059",

language = "英语",

volume = "517",

pages = "2633--2637",

journal = "Thin Solid Films",

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publisher = "Elsevier B.V.",

number = "8",

}

TY - JOUR

T1 - Reduction of crystallization temperature of the Aurivillius phase in Nd-doped SrBi2Ta2O9 thin films via substrate bias

AU - Li, Yibin

AU - Zhang, Sam

AU - Sritharan, Thirumany

AU - He, Xiaodong

AU - Fei, Weidong

PY - 2009/2/27

Y1 - 2009/2/27

N2 - Nd-doped SrBi2Ta2O9 films were sputtered on Pt/Ta/SiO2/Si substrates under various substrate biases. The radio frequency bias results in the reduction of the Aurivillius phase crystallization temperature. At 48 W, the crystallization temperature of film is lowered at a magnitude of about 80 °C. When the bias further increases, Aurivillius phase formation is suppressed due to too deficient Bi in film. The film deposited at 48 W after annealing at 670 °C shows ferroelectric characteristics. The remnant polarization of the films increases as the annealing temperature is increased.

AB - Nd-doped SrBi2Ta2O9 films were sputtered on Pt/Ta/SiO2/Si substrates under various substrate biases. The radio frequency bias results in the reduction of the Aurivillius phase crystallization temperature. At 48 W, the crystallization temperature of film is lowered at a magnitude of about 80 °C. When the bias further increases, Aurivillius phase formation is suppressed due to too deficient Bi in film. The film deposited at 48 W after annealing at 670 °C shows ferroelectric characteristics. The remnant polarization of the films increases as the annealing temperature is increased.

KW - Crystallization temperature

KW - SBT thin film

KW - Substrate bias

UR - https://www.scopus.com/pages/publications/59149083067

U2 - 10.1016/j.tsf.2008.10.059

DO - 10.1016/j.tsf.2008.10.059

M3 - 文章

AN - SCOPUS:59149083067

SN - 0040-6090

VL - 517

SP - 2633

EP - 2637

JO - Thin Solid Films

JF - Thin Solid Films

IS - 8

ER -

Reduction of crystallization temperature of the Aurivillius phase in Nd-doped SrBi₂Ta₂O₉ thin films via substrate bias

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Keywords

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