Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process

D. L. Jiang; L. Li; H. Y. Chen; H. Gao; Q. Qiao; Z. K. Xu; S. J. Jiao

doi:10.1063/1.4918991

Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process

D. L. Jiang
, L. Li
, H. Y. Chen
, H. Gao
, Q. Qiao
, Z. K. Xu
, S. J. Jiao

Harbin Normal University
CAS - Changchun Institute of Optics Fine Mechanics and Physics
University of Chinese Academy of Sciences
Zhejiang Ocean University
Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

A metal-semiconductor-metal (MSM) structure ultraviolet photodetector has been fabricated from amorphous InGaZnO (a-IGZO) film at room temperature. The photodetector can work without consuming external power and show a responsivity of 4 mA/W. The unbiased photoresponse characteristic is attributed to the hole-trapping process occurred in the electrode/a-IGZO interface, and a physical model based on band energy theory is proposed to explain the origin of the photoresponse at zero bias in our device. Our findings may provide a way to realize unbiased photoresponse in the simple MSM structure.

Original language	English
Article number	171103
Journal	Applied Physics Letters
Volume	106
Issue number	17
DOIs	https://doi.org/10.1063/1.4918991
State	Published - 27 Apr 2015
Externally published	Yes

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title = "Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process",

abstract = "A metal-semiconductor-metal (MSM) structure ultraviolet photodetector has been fabricated from amorphous InGaZnO (a-IGZO) film at room temperature. The photodetector can work without consuming external power and show a responsivity of 4 mA/W. The unbiased photoresponse characteristic is attributed to the hole-trapping process occurred in the electrode/a-IGZO interface, and a physical model based on band energy theory is proposed to explain the origin of the photoresponse at zero bias in our device. Our findings may provide a way to realize unbiased photoresponse in the simple MSM structure.",

author = "Jiang, \{D. L.\} and L. Li and Chen, \{H. Y.\} and H. Gao and Q. Qiao and Xu, \{Z. K.\} and Jiao, \{S. J.\}",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

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doi = "10.1063/1.4918991",

language = "英语",

volume = "106",

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T1 - Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process

AU - Jiang, D. L.

AU - Li, L.

AU - Chen, H. Y.

AU - Gao, H.

AU - Qiao, Q.

AU - Xu, Z. K.

AU - Jiao, S. J.

PY - 2015/4/27

Y1 - 2015/4/27

N2 - A metal-semiconductor-metal (MSM) structure ultraviolet photodetector has been fabricated from amorphous InGaZnO (a-IGZO) film at room temperature. The photodetector can work without consuming external power and show a responsivity of 4 mA/W. The unbiased photoresponse characteristic is attributed to the hole-trapping process occurred in the electrode/a-IGZO interface, and a physical model based on band energy theory is proposed to explain the origin of the photoresponse at zero bias in our device. Our findings may provide a way to realize unbiased photoresponse in the simple MSM structure.

AB - A metal-semiconductor-metal (MSM) structure ultraviolet photodetector has been fabricated from amorphous InGaZnO (a-IGZO) film at room temperature. The photodetector can work without consuming external power and show a responsivity of 4 mA/W. The unbiased photoresponse characteristic is attributed to the hole-trapping process occurred in the electrode/a-IGZO interface, and a physical model based on band energy theory is proposed to explain the origin of the photoresponse at zero bias in our device. Our findings may provide a way to realize unbiased photoresponse in the simple MSM structure.

UR - https://www.scopus.com/pages/publications/84929096161

U2 - 10.1063/1.4918991

DO - 10.1063/1.4918991

M3 - 文章

AN - SCOPUS:84929096161

SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 171103

ER -

Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process

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