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Realization of insulating state and superconductivity in the Rashba semiconductor BiTeCl

  • Jian Jun Ying*
  • , Viktor V. Struzhkin
  • , Zi Yu Cao
  • , Alexander F. Goncharov
  • , Ho Kwang Mao
  • , Fei Chen
  • , Xian Hui Chen
  • , Alexander G. Gavriliuk
  • , Xiao Jia Chen
  • *Corresponding author for this work
  • Center for High Pressure Science & Technology Advanced Research
  • Carnegie Institution of Washington
  • CAS - Institute of Solid State Physics
  • University of Science and Technology of China
  • Federal Scientific Research Center Crystallography and Photonics of RAS
  • Russian Academy of Sciences

Research output: Contribution to journalArticlepeer-review

Abstract

Measurements of the resistivity, Hall coefficient, and Raman spectroscopy are performed on a Rashba semiconductor BiTeCl single crystal at high pressures up to 50 GPa. We find that applying pressure first induces a theoretically predicted insulating state, followed by a superconducting phase with an insulating normal state. Upon heavy compression, another different superconducting phase is entered into with a metallic normal state. A domelike evolution of the superconducting transition temperature with pressure is obtained with a crossover from the electron to hole carriers across the boundary of the two superconducting phases. These findings imply the possible realization of a topological state of the insulating and superconducting phases in this material.

Original languageEnglish
Article number100504
JournalPhysical Review B
Volume93
Issue number10
DOIs
StatePublished - 28 Mar 2016
Externally publishedYes

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