Reaction mode-controlled crystal structure and optical and electrical properties of SnOx infrared transparent conducting films

In this study, the reaction mode of high-power pulsed reactive magnetron sputtering and the crystal structure and infrared transparent conductive properties of SnOx thin films prepared at 600 °C were investigated. The effects of sputtering at different oxygen partial pressures from 10 to 24 sccm were examined. For SnOx films deposited at oxygen partial pressures of 10–14 sccm, the reaction mode was dominated by the metallic mode, and the polar unsaturated (101) plane was the preferred orientation of the film crystals. For SnOx films deposited at oxygen partial pressures of 16–18 sccm, the reaction mode was dominated by the transition mode, showing a preferred (110) plane orientation. In the deposition process, at oxygen partial pressure >18 sccm, the reaction proceeded in poisoning mode. As the oxygen partial pressure was increased, the carrier concentration decreased to 1.140 × 10¹⁵ cm⁻³, mobility increased to 14.93 cm²/Vs, and IR transmittance at 4 μm increased. Furthermore, excess O₂ resulted in deteriorated electrical properties of the prepared SnOx films, with a maximum resistivity of 502.9 Ω·cm.