Rapid characterization of GaN-on-diamond interfacial thermal resistance using contactless transient thermoreflectance

Huarui Sun; James W. Pomeroy; Roland B. Simon; Daniel Francis; Firooz Faili; Daniel J. Twitchen; Martin Kuball

Rapid characterization of GaN-on-diamond interfacial thermal resistance using contactless transient thermoreflectance

Huarui Sun
, James W. Pomeroy
, Roland B. Simon
, Daniel Francis
, Firooz Faili
, Daniel J. Twitchen
, Martin Kuball

University of Bristol
De Beers Group

Research output: Contribution to conference › Paper › peer-review

8 Scopus citations

Abstract

Reducing GaN-on-diamond interfacial thermal resistance is crucial to maximize the thermal benefit of diamond substrates for high power transistor applications. In this work, we demonstrate a rapid, contactless transient thermoreflectance technique to assess the interfacial thermal resistance of as-grown GaN-on-diamond wafers.

Original language	English
Pages	151-153
Number of pages	3
State	Published - 2015
Externally published	Yes
Event	30th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2015 - Scottsdale, United States Duration: 18 May 2015 → 21 May 2015

Conference

Conference	30th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2015
Country/Territory	United States
City	Scottsdale
Period	18/05/15 → 21/05/15

Keywords

GaN-on-diamond
TBReff
Transient thermoreflectance

Cite this

Sun, H., Pomeroy, J. W., Simon, R. B., Francis, D., Faili, F., Twitchen, D. J., & Kuball, M. (2015). Rapid characterization of GaN-on-diamond interfacial thermal resistance using contactless transient thermoreflectance. 151-153. Paper presented at 30th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2015, Scottsdale, United States.

@conference{54b99a7b358641be9e37c7f5c844fa09,

title = "Rapid characterization of GaN-on-diamond interfacial thermal resistance using contactless transient thermoreflectance",

abstract = "Reducing GaN-on-diamond interfacial thermal resistance is crucial to maximize the thermal benefit of diamond substrates for high power transistor applications. In this work, we demonstrate a rapid, contactless transient thermoreflectance technique to assess the interfacial thermal resistance of as-grown GaN-on-diamond wafers.",

keywords = "GaN-on-diamond, TBReff, Transient thermoreflectance",

author = "Huarui Sun and Pomeroy, \{James W.\} and Simon, \{Roland B.\} and Daniel Francis and Firooz Faili and Twitchen, \{Daniel J.\} and Martin Kuball",

year = "2015",

language = "英语",

pages = "151--153",

note = "30th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2015 ; Conference date: 18-05-2015 Through 21-05-2015",

}

Sun, H, Pomeroy, JW, Simon, RB, Francis, D, Faili, F, Twitchen, DJ & Kuball, M 2015, 'Rapid characterization of GaN-on-diamond interfacial thermal resistance using contactless transient thermoreflectance', Paper presented at 30th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2015, Scottsdale, United States, 18/05/15 - 21/05/15 pp. 151-153.

Rapid characterization of GaN-on-diamond interfacial thermal resistance using contactless transient thermoreflectance. / Sun, Huarui; Pomeroy, James W.; Simon, Roland B. et al.
2015. 151-153 Paper presented at 30th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2015, Scottsdale, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Rapid characterization of GaN-on-diamond interfacial thermal resistance using contactless transient thermoreflectance

AU - Sun, Huarui

AU - Pomeroy, James W.

AU - Simon, Roland B.

AU - Francis, Daniel

AU - Faili, Firooz

AU - Twitchen, Daniel J.

AU - Kuball, Martin

PY - 2015

Y1 - 2015

N2 - Reducing GaN-on-diamond interfacial thermal resistance is crucial to maximize the thermal benefit of diamond substrates for high power transistor applications. In this work, we demonstrate a rapid, contactless transient thermoreflectance technique to assess the interfacial thermal resistance of as-grown GaN-on-diamond wafers.

AB - Reducing GaN-on-diamond interfacial thermal resistance is crucial to maximize the thermal benefit of diamond substrates for high power transistor applications. In this work, we demonstrate a rapid, contactless transient thermoreflectance technique to assess the interfacial thermal resistance of as-grown GaN-on-diamond wafers.

KW - GaN-on-diamond

KW - TBReff

KW - Transient thermoreflectance

UR - https://www.scopus.com/pages/publications/85005976124

M3 - 论文

AN - SCOPUS:85005976124

SP - 151

EP - 153

T2 - 30th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2015

Y2 - 18 May 2015 through 21 May 2015

ER -

Rapid characterization of GaN-on-diamond interfacial thermal resistance using contactless transient thermoreflectance

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Conference

Keywords

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