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Raman Study of Polydimethylsiloxane Substrate Effect on Hydrogenation of Graphene

  • Chuan Wei Gao
  • , Ying Ying Wang*
  • , Jie Jiang
  • , Hai Yan Nan
  • , Zhen Hua Ni
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Raman spectroscopy is used to monitor hydrogenation of graphene on polydimethylsiloxane (PDMS) as well as on SiO2/Si substrates. It is found that hydrogenation of graphene on SiO2/Si is much more feasible than that on PDMS. For graphene on PDMS substrates, hydrogenation of graphene is favored on very flexible substrates. The substrate (SiO2/Si and PDMS) and flexibility (PDMS with different flexibility) dependent hydrogenation behavior can be understood by different interactions between graphene and substrate. The interaction between graphene and SiO2/Si is relative weak (van der Waals force) and the interaction between graphene and PDMS is relative strong, where substrate induced prestrain in the graphene layer is observed. For graphene embedded on the PDMS substrate, the more flexible the substrate is, the weaker the interaction between PDMS and graphene. The understanding of the effect of PDMS's flexibility on hydrogenation of graphene will be helpful for graphene based flexible electronics.

Original languageEnglish
Article number058101
JournalChinese Physics Letters
Volume32
Issue number5
DOIs
StatePublished - 1 May 2015
Externally publishedYes

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