Radiation effects on bipolar junction transistors and integrated circuits produced by different energy Br ions

Xingji Li; Hongbin Geng; Chaoming Liu; Zhiming Zhao; Mujie Lan; Dezhuang Yang; Shiyu He

doi:10.1016/j.nima.2009.10.165

Radiation effects on bipolar junction transistors and integrated circuits produced by different energy Br ions

Xingji Li^*
, Hongbin Geng
, Chaoming Liu
, Zhiming Zhao
, Mujie Lan
, Dezhuang Yang
, Shiyu He

^*Corresponding author for this work

Harbin Institute of Technology
School of Astronautics, Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The radiation responses of the NPN bipolar junction transistors (BJTs) and the TTL bipolar integrated circuits (ICs) have been examined using 20, 40 and 60 MeV Br ions. Key electric parameter was measured and compared after each energy irradiation. Experimental results demonstrate that the degradation in electric parameters caused by the Br ions shows a common feature for the NPN BJTs and TTL ICs, in which the degradation is strengthened with decreasing the Br ions energy. The ionizing dose (D_i) and displacement dose (D_d) as a function of the chip depth in the bipolar devices were calculated using the SRIM code, in order to analyze the radiation effects on the NPN BJTs and the Bipolar ICs. From the experiment and calculation results, it could be deduced that the Br ions mainly cause displacement damage to both the NPN BJTs and the TTL ICs, and the higher the ratio of D_d/(D_d+D_i), the larger the degradation in electric parameters at a given total dose.

Original language	English
Pages (from-to)	171-175
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	612
Issue number	1
DOIs	https://doi.org/10.1016/j.nima.2009.10.165
State	Published - 21 Dec 2009

Keywords

Bipolar devices
Displacement dose
Ionizing dose
Radiation effects
SRIM

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10.1016/j.nima.2009.10.165

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Li, X., Geng, H., Liu, C., Zhao, Z., Lan, M., Yang, D., & He, S. (2009). Radiation effects on bipolar junction transistors and integrated circuits produced by different energy Br ions. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 612(1), 171-175. https://doi.org/10.1016/j.nima.2009.10.165

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title = "Radiation effects on bipolar junction transistors and integrated circuits produced by different energy Br ions",

abstract = "The radiation responses of the NPN bipolar junction transistors (BJTs) and the TTL bipolar integrated circuits (ICs) have been examined using 20, 40 and 60 MeV Br ions. Key electric parameter was measured and compared after each energy irradiation. Experimental results demonstrate that the degradation in electric parameters caused by the Br ions shows a common feature for the NPN BJTs and TTL ICs, in which the degradation is strengthened with decreasing the Br ions energy. The ionizing dose (Di) and displacement dose (Dd) as a function of the chip depth in the bipolar devices were calculated using the SRIM code, in order to analyze the radiation effects on the NPN BJTs and the Bipolar ICs. From the experiment and calculation results, it could be deduced that the Br ions mainly cause displacement damage to both the NPN BJTs and the TTL ICs, and the higher the ratio of Dd/(Dd+Di), the larger the degradation in electric parameters at a given total dose.",

keywords = "Bipolar devices, Displacement dose, Ionizing dose, Radiation effects, SRIM",

author = "Xingji Li and Hongbin Geng and Chaoming Liu and Zhiming Zhao and Mujie Lan and Dezhuang Yang and Shiyu He",

year = "2009",

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pages = "171--175",

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Li, X , Geng, H , Liu, C, Zhao, Z, Lan, M, Yang, D & He, S 2009, 'Radiation effects on bipolar junction transistors and integrated circuits produced by different energy Br ions', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 612, no. 1, pp. 171-175. https://doi.org/10.1016/j.nima.2009.10.165

Radiation effects on bipolar junction transistors and integrated circuits produced by different energy Br ions. / Li, Xingji ; Geng, Hongbin ; Liu, Chaoming et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 612, No. 1, 21.12.2009, p. 171-175.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Radiation effects on bipolar junction transistors and integrated circuits produced by different energy Br ions

AU - Li, Xingji

AU - Geng, Hongbin

AU - Liu, Chaoming

AU - Zhao, Zhiming

AU - Lan, Mujie

AU - Yang, Dezhuang

AU - He, Shiyu

PY - 2009/12/21

Y1 - 2009/12/21

N2 - The radiation responses of the NPN bipolar junction transistors (BJTs) and the TTL bipolar integrated circuits (ICs) have been examined using 20, 40 and 60 MeV Br ions. Key electric parameter was measured and compared after each energy irradiation. Experimental results demonstrate that the degradation in electric parameters caused by the Br ions shows a common feature for the NPN BJTs and TTL ICs, in which the degradation is strengthened with decreasing the Br ions energy. The ionizing dose (Di) and displacement dose (Dd) as a function of the chip depth in the bipolar devices were calculated using the SRIM code, in order to analyze the radiation effects on the NPN BJTs and the Bipolar ICs. From the experiment and calculation results, it could be deduced that the Br ions mainly cause displacement damage to both the NPN BJTs and the TTL ICs, and the higher the ratio of Dd/(Dd+Di), the larger the degradation in electric parameters at a given total dose.

AB - The radiation responses of the NPN bipolar junction transistors (BJTs) and the TTL bipolar integrated circuits (ICs) have been examined using 20, 40 and 60 MeV Br ions. Key electric parameter was measured and compared after each energy irradiation. Experimental results demonstrate that the degradation in electric parameters caused by the Br ions shows a common feature for the NPN BJTs and TTL ICs, in which the degradation is strengthened with decreasing the Br ions energy. The ionizing dose (Di) and displacement dose (Dd) as a function of the chip depth in the bipolar devices were calculated using the SRIM code, in order to analyze the radiation effects on the NPN BJTs and the Bipolar ICs. From the experiment and calculation results, it could be deduced that the Br ions mainly cause displacement damage to both the NPN BJTs and the TTL ICs, and the higher the ratio of Dd/(Dd+Di), the larger the degradation in electric parameters at a given total dose.

KW - Bipolar devices

KW - Displacement dose

KW - Ionizing dose

KW - Radiation effects

KW - SRIM

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DO - 10.1016/j.nima.2009.10.165

M3 - 文章

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VL - 612

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JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1

ER -

Radiation effects on bipolar junction transistors and integrated circuits produced by different energy Br ions

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