Radiation damage effects on double-junction GaInP2/GaAs solar cells

Yueyuan Wang; Jianmin Hu; Yiyong Wu; Jianwen Xu; Jianfeng Lu; Huijie Zhao; Bin Qian

doi:10.1016/j.nimb.2014.03.022

Radiation damage effects on double-junction GaInP₂/GaAs solar cells

Yueyuan Wang
, Jianmin Hu^*
, Yiyong Wu
, Jianwen Xu
, Jianfeng Lu
, Huijie Zhao
, Bin Qian

^*Corresponding author for this work

Harbin Normal University
Harbin Institute of Technology
Shanghai Institute of Space Power Sources

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The radiation effects on a double-junction GaInP₂/GaAs solar cell were studied under exposures of 100 keV protons, 10 MeV protons and 1 MeV electrons, in terms of changes on electrical properties and spectral response. The results indicate that the electrical property degradation of the double-junction GaInP₂/GaAs solar cell under irradiation occurs mainly due to the damage in the GaAs sub-cell. The GaAs sub-cell damage is primarily attributed to the decrease in collection efficiency of the minority carriers coming from its base bottom. It is revealed from the cell behavior under exposure to 100 keV protons irradiation that under the AM0 illumination, there is no obvious damage defected in the tunnel junction between the GaInP₂ and the GaAs sub cells. In addition, the tunnel junction between the GaInP₂ and the GaAs sub-cells is stable and no boundary traps are formed.

Original language	English
Pages (from-to)	76-81
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	330
DOIs	https://doi.org/10.1016/j.nimb.2014.03.022
State	Published - 1 Jul 2014
Externally published	Yes

Keywords

Electrical properties
Irradiation effects
Spectral response
Tunnel junction

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10.1016/j.nimb.2014.03.022

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title = "Radiation damage effects on double-junction GaInP2/GaAs solar cells",

abstract = "The radiation effects on a double-junction GaInP2/GaAs solar cell were studied under exposures of 100 keV protons, 10 MeV protons and 1 MeV electrons, in terms of changes on electrical properties and spectral response. The results indicate that the electrical property degradation of the double-junction GaInP2/GaAs solar cell under irradiation occurs mainly due to the damage in the GaAs sub-cell. The GaAs sub-cell damage is primarily attributed to the decrease in collection efficiency of the minority carriers coming from its base bottom. It is revealed from the cell behavior under exposure to 100 keV protons irradiation that under the AM0 illumination, there is no obvious damage defected in the tunnel junction between the GaInP2 and the GaAs sub cells. In addition, the tunnel junction between the GaInP2 and the GaAs sub-cells is stable and no boundary traps are formed.",

keywords = "Electrical properties, Irradiation effects, Spectral response, Tunnel junction",

author = "Yueyuan Wang and Jianmin Hu and Yiyong Wu and Jianwen Xu and Jianfeng Lu and Huijie Zhao and Bin Qian",

year = "2014",

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doi = "10.1016/j.nimb.2014.03.022",

language = "英语",

volume = "330",

pages = "76--81",

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}

TY - JOUR

T1 - Radiation damage effects on double-junction GaInP2/GaAs solar cells

AU - Wang, Yueyuan

AU - Hu, Jianmin

AU - Wu, Yiyong

AU - Xu, Jianwen

AU - Lu, Jianfeng

AU - Zhao, Huijie

AU - Qian, Bin

PY - 2014/7/1

Y1 - 2014/7/1

N2 - The radiation effects on a double-junction GaInP2/GaAs solar cell were studied under exposures of 100 keV protons, 10 MeV protons and 1 MeV electrons, in terms of changes on electrical properties and spectral response. The results indicate that the electrical property degradation of the double-junction GaInP2/GaAs solar cell under irradiation occurs mainly due to the damage in the GaAs sub-cell. The GaAs sub-cell damage is primarily attributed to the decrease in collection efficiency of the minority carriers coming from its base bottom. It is revealed from the cell behavior under exposure to 100 keV protons irradiation that under the AM0 illumination, there is no obvious damage defected in the tunnel junction between the GaInP2 and the GaAs sub cells. In addition, the tunnel junction between the GaInP2 and the GaAs sub-cells is stable and no boundary traps are formed.

AB - The radiation effects on a double-junction GaInP2/GaAs solar cell were studied under exposures of 100 keV protons, 10 MeV protons and 1 MeV electrons, in terms of changes on electrical properties and spectral response. The results indicate that the electrical property degradation of the double-junction GaInP2/GaAs solar cell under irradiation occurs mainly due to the damage in the GaAs sub-cell. The GaAs sub-cell damage is primarily attributed to the decrease in collection efficiency of the minority carriers coming from its base bottom. It is revealed from the cell behavior under exposure to 100 keV protons irradiation that under the AM0 illumination, there is no obvious damage defected in the tunnel junction between the GaInP2 and the GaAs sub cells. In addition, the tunnel junction between the GaInP2 and the GaAs sub-cells is stable and no boundary traps are formed.

KW - Electrical properties

KW - Irradiation effects

KW - Spectral response

KW - Tunnel junction

UR - https://www.scopus.com/pages/publications/84899553785

U2 - 10.1016/j.nimb.2014.03.022

DO - 10.1016/j.nimb.2014.03.022

M3 - 文章

AN - SCOPUS:84899553785

SN - 0168-583X

VL - 330

SP - 76

EP - 81

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Radiation damage effects on double-junction GaInP₂/GaAs solar cells

Abstract

Keywords

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