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Quenching of surface-exciton emission from ZnO nanocombs by plasma immersion ion implantation

  • Y. Yang
  • , B. K. Tay
  • , X. W. Sun*
  • , J. Y. Sze
  • , Z. J. Han
  • , J. X. Wang
  • , X. H. Zhang
  • , Y. B. Li
  • , S. Zhang
  • *Corresponding author for this work
  • Nanyang Technological University
  • Agency for Science, Technology and Research, Singapore

Research output: Contribution to journalArticlepeer-review

Abstract

Surface modification of ZnO nanocombs was performed through a Ti plasma immersion ion implantation (PIII) with low bias voltages ranging from 0 to 5 kV to quench surface-originated exciton emission. The ion energy dependent surface modification on ZnO was investigated using transmission electron microscopy and temperature-dependent photoluminescence (PL). The surface exciton (SX) was clearly identified for the as-grown sample at 4.5 K, and complete quenching was observed for sample treated with 5 kV PIII due to surface state passivation. The SX related surface states were located within 5 nm in depth from the surface corresponding to the implantation depth of 5 kV PIII. Room-temperature PL enhancement of these surface-modified ZnO nanocombs was observed and discussed. The results show that PIII can become a viable technique for nanostructure surface passivation.

Original languageEnglish
Article number071921
JournalApplied Physics Letters
Volume91
Issue number7
DOIs
StatePublished - 2007
Externally publishedYes

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