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Quasicontinuum method simulation of nanometric cutting of single crystal copper

  • School of Mechatronics Engineering, Harbin Institute of Technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A multiscale simulation model was built to study the nanometric cutting process of single crystal copper. This multiscale model distinctly reduces the degree of freedom of the whole system compared with full atomistic simulations. Through analyzing the fluctuations of tangential cutting force and strain energy with cutting distance, we confirm that the deformation mechanism of single crystal copper is plastic deformation caused by generation and evolution dislocation. The highest compressive stress locates in shear zone and highest tensile stress locates in the machined surface and subsurface. Simulation results show that there exists a high value of stress around dislocations, which reveals the local high value of stress is the main reason for the generation and evolution of dislocations in the workpiece material.

Original languageEnglish
Title of host publicationAdvances in Materials Manufacturing Science and Technology XIII
Subtitle of host publicationModern Design Theory and Methodology, MEMS and Nanotechnology, Material Science and Technology in Manufacturing
PublisherTrans Tech Publications Ltd
Pages381-386
Number of pages6
ISBN (Print)0878493123, 9780878493128
DOIs
StatePublished - 2009
Externally publishedYes
Event13th International Manufacturing Conference in China, IMCC2009 - Dalian, China
Duration: 21 Sep 200923 Sep 2009

Publication series

NameMaterials Science Forum
Volume628 629
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference13th International Manufacturing Conference in China, IMCC2009
Country/TerritoryChina
CityDalian
Period21/09/0923/09/09

Keywords

  • Dislocation
  • Nanometric cutting
  • Quasicontinuum method
  • Single crystal copper
  • Stress

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