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Pressureless low-temperature sintering of plasma activated Ag nanoparticles for high-power device packaging

  • Hui Fang
  • , Chenxi Wang*
  • , Te Wang
  • , Hong Wang
  • , Shicheng Zhou
  • , Yilong Huang
  • , Yanhong Tian
  • *Corresponding author for this work
  • Harbin Institute of Technology
  • Academy of Space Electronic Information Technology

Research output: Contribution to journalArticlepeer-review

Abstract

A controllable plasma-activated method to achieve pressureless sintering of Ag nanoparticles is proposed for low-temperature bonding. O2 plasma activation is employed to effectively decompose organics coated on the nanoparticles prior to sintering, avoiding the loose interfacial microstructures. Therefore, robust bonding Cu-Cu joints with high shear strength (>20 MPa) can be formed at a low temperature of 200 °C without requiring additional pressure. This rapid and controllable activation method significantly enhances the sinterability of the Ag particles, leading to a dense microstructure. The improved thermal conductivity is three times higher than the one prepared without plasma activation.

Original languageEnglish
Article number126620
JournalMaterials Letters
Volume256
DOIs
StatePublished - 1 Dec 2019

Keywords

  • Low-temperature bonding
  • Nanoparticles
  • Plasma activation
  • Shear strength
  • Sintering
  • Thermal conductivity

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