Skip to main navigation Skip to search Skip to main content

Pressure-induced valence change and semiconductor-metal transition in PbCrO3

  • Min Wu
  • , Lirong Zheng
  • , Shengqi Chu
  • , Zhenxing Qin
  • , Xiao Jia Chen
  • , Chuanlong Lin
  • , Zheng Tang
  • , Tiandou Hu*
  • *Corresponding author for this work
  • CAS - Institute of High Energy Physics
  • South China University of Technology
  • Taiyuan University of Science and Technology
  • Center for High Pressure Science & Technology Advanced Research

Research output: Contribution to journalArticlepeer-review

Abstract

Pressure-induced valence change and semiconductor-metal transition were revealed in perovskite compound PbCrO3 by X-ray absorption spectroscopy (XAS) and resistance measurements, respectively. The Cr L2,3 edge XAS spectra indicate a charge disproportionation of Cr (3Cr4+ → 2Cr3+ + Cr6+) at ambient pressure, suggesting that the ambient-pressure phase of PbCrO3 has complex local structure and cannot be explained using the simple cubic perovskite structure (Pm-3m). Upon compression up to 4.2 GPa, Cr3+ and Cr6+ ions were converted to Cr4+ via charge transfer, associated with semiconductor-metal transition. The high-pressure metal phase is determined to be cubic perovskite structure (Pm-3m). Compared with the previous X-ray diffraction experiment, the large volume collapse (∼9.8% at 1.6 GPa) may be related to valence change and semiconductor-metal transition.

Original languageEnglish
Pages (from-to)23274-23278
Number of pages5
JournalJournal of Physical Chemistry C
Volume118
Issue number40
DOIs
StatePublished - 9 Oct 2014
Externally publishedYes

Fingerprint

Dive into the research topics of 'Pressure-induced valence change and semiconductor-metal transition in PbCrO3'. Together they form a unique fingerprint.

Cite this