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Preparation of ZAO powder and investigation on its infrared emissivity

  • Xiao Wei Wu*
  • , Yu Jie Feng
  • , Yan Kun Liu
  • *Corresponding author for this work
  • Harbin Institute of Technology
  • Harbin Normal University

Research output: Contribution to journalArticlepeer-review

Abstract

According to the basic infrared stealth mechanism of low infrared emissivity powders, the ZAO powder materials were prepared by liquid coprecipitation method, and the starting materials were Zn(NO3) 6H2O and Al(NO3)39H2O. The process parameters were obtained, and the relationship between technology parameters and infrared emissivity was investigated. The temperature of thermal treatment, crystal structure and surface micrograph of ZAO powder was analyzed by the help of TG-DTA, XRD and SEM. The infrared stealth performance of ZAO powder was studied by IR-2 emissivity spectroscopy. Results showed that the infrared emissivity was the lowest when pH was 8.0, calcination temperature was 1100°C, calcination time was 2 h, and the Al2O3 doping content was 3% (mass percentage). The crystal structure of doped ZAO powder was lead-zinc, and there exists distortion of crystal lattice in nanocrystalline ZnO. The average particle size was 10 μm. The lowest infrared emissivity reached to 0.61 at between 8 μm and 14 μm. It means that the ZAO powders will be excellent infrared stealthy materials.

Original languageEnglish
Pages (from-to)588-592
Number of pages5
JournalJournal of Harbin Institute of Technology (New Series)
Volume17
Issue number4
StatePublished - Aug 2010

Keywords

  • Emissivity
  • Infrared stealth
  • Semiconductor material
  • ZAO

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