Preparation of platinum silicide films by pulsed laser deposition and pulsed laser annealing

Mei Cheng Li; Xuekang Chen; Wei Cai; Jinghua Yin; Jianping Yang; Gan Wu; Liancheng Zhao

doi:10.1016/S0254-0584(01)00300-5

Preparation of platinum silicide films by pulsed laser deposition and pulsed laser annealing

Mei Cheng Li^*
, Xuekang Chen
, Wei Cai
, Jinghua Yin
, Jianping Yang
, Gan Wu
, Liancheng Zhao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The formation of PtSi ultra-thin films prepared by pulsed laser deposition during pulsed laser annealing has been studied. The growth sequence of the Pt₂Si and the PtSi phases that evolved as the result of the diffusion reaction in the bilayers was examined by X-ray photoelectron spectroscopy (XPS) and the structure characteristics of PtSi were investigated by XPS. X-ray diffraction (XRD) and atomic force microscopy (AFM). Superb uniformity of PtSi films and smooth PtSi/Si interfaces were obtained by pulsed laser annealing.

Original language	English
Pages (from-to)	85-87
Number of pages	3
Journal	Materials Chemistry and Physics
Volume	72
Issue number	1
DOIs	https://doi.org/10.1016/S0254-0584(01)00300-5
State	Published - 1 Aug 2001
Externally published	Yes

Keywords

Laser annealing
Nanometer thin film
Pulsed laser deposition

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10.1016/S0254-0584(01)00300-5

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@article{398563b77bbf41a28d088824feb8e61d,

title = "Preparation of platinum silicide films by pulsed laser deposition and pulsed laser annealing",

abstract = "The formation of PtSi ultra-thin films prepared by pulsed laser deposition during pulsed laser annealing has been studied. The growth sequence of the Pt2Si and the PtSi phases that evolved as the result of the diffusion reaction in the bilayers was examined by X-ray photoelectron spectroscopy (XPS) and the structure characteristics of PtSi were investigated by XPS. X-ray diffraction (XRD) and atomic force microscopy (AFM). Superb uniformity of PtSi films and smooth PtSi/Si interfaces were obtained by pulsed laser annealing.",

keywords = "Laser annealing, Nanometer thin film, Pulsed laser deposition",

author = "Li, \{Mei Cheng\} and Xuekang Chen and Wei Cai and Jinghua Yin and Jianping Yang and Gan Wu and Liancheng Zhao",

year = "2001",

month = aug,

day = "1",

doi = "10.1016/S0254-0584(01)00300-5",

language = "英语",

volume = "72",

pages = "85--87",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Preparation of platinum silicide films by pulsed laser deposition and pulsed laser annealing

AU - Li, Mei Cheng

AU - Chen, Xuekang

AU - Cai, Wei

AU - Yin, Jinghua

AU - Yang, Jianping

AU - Wu, Gan

AU - Zhao, Liancheng

PY - 2001/8/1

Y1 - 2001/8/1

N2 - The formation of PtSi ultra-thin films prepared by pulsed laser deposition during pulsed laser annealing has been studied. The growth sequence of the Pt2Si and the PtSi phases that evolved as the result of the diffusion reaction in the bilayers was examined by X-ray photoelectron spectroscopy (XPS) and the structure characteristics of PtSi were investigated by XPS. X-ray diffraction (XRD) and atomic force microscopy (AFM). Superb uniformity of PtSi films and smooth PtSi/Si interfaces were obtained by pulsed laser annealing.

AB - The formation of PtSi ultra-thin films prepared by pulsed laser deposition during pulsed laser annealing has been studied. The growth sequence of the Pt2Si and the PtSi phases that evolved as the result of the diffusion reaction in the bilayers was examined by X-ray photoelectron spectroscopy (XPS) and the structure characteristics of PtSi were investigated by XPS. X-ray diffraction (XRD) and atomic force microscopy (AFM). Superb uniformity of PtSi films and smooth PtSi/Si interfaces were obtained by pulsed laser annealing.

KW - Laser annealing

KW - Nanometer thin film

KW - Pulsed laser deposition

UR - https://www.scopus.com/pages/publications/0035419455

U2 - 10.1016/S0254-0584(01)00300-5

DO - 10.1016/S0254-0584(01)00300-5

M3 - 文章

AN - SCOPUS:0035419455

SN - 0254-0584

VL - 72

SP - 85

EP - 87

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 1

ER -

Preparation of platinum silicide films by pulsed laser deposition and pulsed laser annealing

Abstract

Keywords

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