Preparation and study of stoichiometric ZnO by MOCVD technique

Xinsheng Wang; Tianpeng Yang; Guotong Du; Hongwei Liang; Yuchun Chang; Weifeng Liu; Yibin Xu

doi:10.1016/j.jcrysgro.2005.09.002

Preparation and study of stoichiometric ZnO by MOCVD technique

Xinsheng Wang
, Tianpeng Yang
, Guotong Du^*
, Hongwei Liang
, Yuchun Chang
, Weifeng Liu
, Yibin Xu

^*Corresponding author for this work

Dalian University of Technology
Jilin University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The effects of growth temperature on the optical and electronics properties of ZnO thin films, grown on n-Si(1 0 0) substrate by plasma-assisted MOCVD, were investigated by X-ray diffraction (XRD), X-ray photoelectron spectrometer (XPS), photoluminescence (PL), and Hall measurements. The XRD patterns of the samples indicated that the crystallinity of the ZnO films grown in 500 °C was improved. The XPS spectra showed that ZnO films changed from O-rich to Zn-rich after increasing temperature from 400 to 500 °C. Moreover, Hall measurements indicated that the resistivity in 400 °C (>10⁴ Ω cm) was higher than that in 500 °C (3.48×10³ Ω cm). The PL spectrum also showed that the ultraviolet emission peak in 400 °C was stronger than that in 500 °C. These results can possibly help improve the understanding of obtaining highly optical films grown on n-Si(1 0 0) substrates.

Original language	English
Pages (from-to)	521-526
Number of pages	6
Journal	Journal of Crystal Growth
Volume	285
Issue number	4
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.09.002
State	Published - 15 Dec 2005
Externally published	Yes

Keywords

A1. Photoluminescence
A1. X-ray diffraction
A1. X-ray photoelectron
A3. Metalorganic molecular beam epitaxy
B1. Zinc compounds
B2. Semiconducting II-VI materials

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10.1016/j.jcrysgro.2005.09.002

Cite this

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title = "Preparation and study of stoichiometric ZnO by MOCVD technique",

abstract = "The effects of growth temperature on the optical and electronics properties of ZnO thin films, grown on n-Si(1 0 0) substrate by plasma-assisted MOCVD, were investigated by X-ray diffraction (XRD), X-ray photoelectron spectrometer (XPS), photoluminescence (PL), and Hall measurements. The XRD patterns of the samples indicated that the crystallinity of the ZnO films grown in 500 °C was improved. The XPS spectra showed that ZnO films changed from O-rich to Zn-rich after increasing temperature from 400 to 500 °C. Moreover, Hall measurements indicated that the resistivity in 400 °C (>104 Ω cm) was higher than that in 500 °C (3.48×103 Ω cm). The PL spectrum also showed that the ultraviolet emission peak in 400 °C was stronger than that in 500 °C. These results can possibly help improve the understanding of obtaining highly optical films grown on n-Si(1 0 0) substrates.",

keywords = "A1. Photoluminescence, A1. X-ray diffraction, A1. X-ray photoelectron, A3. Metalorganic molecular beam epitaxy, B1. Zinc compounds, B2. Semiconducting II-VI materials",

author = "Xinsheng Wang and Tianpeng Yang and Guotong Du and Hongwei Liang and Yuchun Chang and Weifeng Liu and Yibin Xu",

year = "2005",

month = dec,

day = "15",

doi = "10.1016/j.jcrysgro.2005.09.002",

language = "英语",

volume = "285",

pages = "521--526",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Preparation and study of stoichiometric ZnO by MOCVD technique

AU - Wang, Xinsheng

AU - Yang, Tianpeng

AU - Du, Guotong

AU - Liang, Hongwei

AU - Chang, Yuchun

AU - Liu, Weifeng

AU - Xu, Yibin

PY - 2005/12/15

Y1 - 2005/12/15

N2 - The effects of growth temperature on the optical and electronics properties of ZnO thin films, grown on n-Si(1 0 0) substrate by plasma-assisted MOCVD, were investigated by X-ray diffraction (XRD), X-ray photoelectron spectrometer (XPS), photoluminescence (PL), and Hall measurements. The XRD patterns of the samples indicated that the crystallinity of the ZnO films grown in 500 °C was improved. The XPS spectra showed that ZnO films changed from O-rich to Zn-rich after increasing temperature from 400 to 500 °C. Moreover, Hall measurements indicated that the resistivity in 400 °C (>104 Ω cm) was higher than that in 500 °C (3.48×103 Ω cm). The PL spectrum also showed that the ultraviolet emission peak in 400 °C was stronger than that in 500 °C. These results can possibly help improve the understanding of obtaining highly optical films grown on n-Si(1 0 0) substrates.

AB - The effects of growth temperature on the optical and electronics properties of ZnO thin films, grown on n-Si(1 0 0) substrate by plasma-assisted MOCVD, were investigated by X-ray diffraction (XRD), X-ray photoelectron spectrometer (XPS), photoluminescence (PL), and Hall measurements. The XRD patterns of the samples indicated that the crystallinity of the ZnO films grown in 500 °C was improved. The XPS spectra showed that ZnO films changed from O-rich to Zn-rich after increasing temperature from 400 to 500 °C. Moreover, Hall measurements indicated that the resistivity in 400 °C (>104 Ω cm) was higher than that in 500 °C (3.48×103 Ω cm). The PL spectrum also showed that the ultraviolet emission peak in 400 °C was stronger than that in 500 °C. These results can possibly help improve the understanding of obtaining highly optical films grown on n-Si(1 0 0) substrates.

KW - A1. Photoluminescence

KW - A1. X-ray diffraction

KW - A1. X-ray photoelectron

KW - A3. Metalorganic molecular beam epitaxy

KW - B1. Zinc compounds

KW - B2. Semiconducting II-VI materials

UR - https://www.scopus.com/pages/publications/28044434399

U2 - 10.1016/j.jcrysgro.2005.09.002

DO - 10.1016/j.jcrysgro.2005.09.002

M3 - 文章

AN - SCOPUS:28044434399

SN - 0022-0248

VL - 285

SP - 521

EP - 526

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 4

ER -

Preparation and study of stoichiometric ZnO by MOCVD technique

Abstract

Keywords

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