Abstract
SrBi2.2Ta2O9 (SBT) thin film with thickness of 2 μm was successfully prepared by sol-gel method, using strontium acetate semihydrate [Sr(CH3COO)2·1/2H2O] and bismuth subnitrate[BiO(NO3)], and tantalum ethoxide [Ta(OCH2CH3)5] as source materials, glacial acetic and ethylene glycol as solvents. The X-ray diffraction (XRD) and transmission electron microscope (TEM) results indicate that SBT layer-perovskite phase obtained has to be single phase, SBT thin film is formed after being annealed at 800°C for 1 min. The typical hysteresis loop of SBT thin film on Pt/Ti/SiO2/Si is obtained, and the measured polarization value of the SBT thin film is 4.2 μC/cm2.
| Original language | English |
|---|---|
| Pages (from-to) | 376-379 |
| Number of pages | 4 |
| Journal | Journal of Central South University of Technology (English Edition) |
| Volume | 12 |
| Issue number | 4 |
| DOIs | |
| State | Published - Aug 2005 |
Keywords
- Ferroelectric
- Sol-gel technique
- SrBiTaO
- Thin film
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