Preparation and oxidation resistance of SiCsf/SiC-BN composites

Zhi Hua Yang; De Chang Jia; Yu Zhou; Peng Yuan Shi; Cheng Bin Song

Preparation and oxidation resistance of SiC_sf/SiC-BN composites

Zhi Hua Yang^*
, De Chang Jia
, Yu Zhou
, Peng Yuan Shi
, Cheng Bin Song

^*Corresponding author for this work

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

SiC-BN composites, reinforced by SiC short fibers, were fabricated via in-situ synthetic reaction (SiC_sf/SiC-BN). The oxidation kinetics were analyzed and calculated from 800°C to 1200°C. Oxidation resistance of SiC_sf/SiC-BN composites had been analyzed from 800°C to 1200°C. The results show that the in situ synthesis, which used Si₃N₄, B₄C and carbon as reactants, could take place to form the matrix of composites. SiC and BN are oxidized to form SiO₂and B₂O₃ at high temperature. The SiO₂ and B₂O₃ react to form stable borosilicates glass which can decrease rate of oxidation.

Original language	English
Pages (from-to)	18-22
Number of pages	5
Journal	Journal of Materials Engineering
Issue number	7
State	Published - Jul 2004
Externally published	Yes

Keywords

In-situ synthesis
Oxidation
SiC
SiC-BN composites

Cite this

@article{c2038e5a620e4e6a83235dab4023b11a,

title = "Preparation and oxidation resistance of SiCsf/SiC-BN composites",

abstract = "SiC-BN composites, reinforced by SiC short fibers, were fabricated via in-situ synthetic reaction (SiCsf/SiC-BN). The oxidation kinetics were analyzed and calculated from 800°C to 1200°C. Oxidation resistance of SiCsf/SiC-BN composites had been analyzed from 800°C to 1200°C. The results show that the in situ synthesis, which used Si3N4, B4C and carbon as reactants, could take place to form the matrix of composites. SiC and BN are oxidized to form SiO2and B2O3 at high temperature. The SiO2 and B2O3 react to form stable borosilicates glass which can decrease rate of oxidation.",

keywords = "In-situ synthesis, Oxidation, SiC, SiC-BN composites",

author = "Yang, \{Zhi Hua\} and Jia, \{De Chang\} and Yu Zhou and Shi, \{Peng Yuan\} and Song, \{Cheng Bin\}",

year = "2004",

month = jul,

language = "英语",

pages = "18--22",

journal = "Journal of Materials Engineering",

issn = "1001-4381",

publisher = "Science Press ",

number = "7",

}

TY - JOUR

T1 - Preparation and oxidation resistance of SiCsf/SiC-BN composites

AU - Yang, Zhi Hua

AU - Jia, De Chang

AU - Zhou, Yu

AU - Shi, Peng Yuan

AU - Song, Cheng Bin

PY - 2004/7

Y1 - 2004/7

N2 - SiC-BN composites, reinforced by SiC short fibers, were fabricated via in-situ synthetic reaction (SiCsf/SiC-BN). The oxidation kinetics were analyzed and calculated from 800°C to 1200°C. Oxidation resistance of SiCsf/SiC-BN composites had been analyzed from 800°C to 1200°C. The results show that the in situ synthesis, which used Si3N4, B4C and carbon as reactants, could take place to form the matrix of composites. SiC and BN are oxidized to form SiO2and B2O3 at high temperature. The SiO2 and B2O3 react to form stable borosilicates glass which can decrease rate of oxidation.

AB - SiC-BN composites, reinforced by SiC short fibers, were fabricated via in-situ synthetic reaction (SiCsf/SiC-BN). The oxidation kinetics were analyzed and calculated from 800°C to 1200°C. Oxidation resistance of SiCsf/SiC-BN composites had been analyzed from 800°C to 1200°C. The results show that the in situ synthesis, which used Si3N4, B4C and carbon as reactants, could take place to form the matrix of composites. SiC and BN are oxidized to form SiO2and B2O3 at high temperature. The SiO2 and B2O3 react to form stable borosilicates glass which can decrease rate of oxidation.

KW - In-situ synthesis

KW - Oxidation

KW - SiC

KW - SiC-BN composites

UR - https://www.scopus.com/pages/publications/5644293355

M3 - 文章

AN - SCOPUS:5644293355

SN - 1001-4381

SP - 18

EP - 22

JO - Journal of Materials Engineering

JF - Journal of Materials Engineering

IS - 7

ER -

Preparation and oxidation resistance of SiC_sf/SiC-BN composites

Abstract

Keywords

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