Abstract
Aiming at the poor adjustment and high operating temperature of inorganic semiconductor sensor, a research of new matallophthalocyanine organic semiconductor gas-sensing materials was carried out. The senisng materials were characterized, and the result was consistent with chemistry configuration and calculational reslut. Plane fork electrode was prepared by using micro-electronic technology, and sensitive membranes were formed on fork electrode by means of spin-coating technology. The thin films were characterized by IR and AFM, and the AFM image showed that the surface of the thin film was uniform, smooth and compact. The gas sensing properties of spin-coated films are determined to NO2 by static state method, and the result showed that PbPc(iso-PeO)8 with 6.5 mg·mL-1 had better gas sensitivity and response-recovery characteristic than CuPc(iso-PeO)8 and NiPc(iso-PeO)8.
| Original language | English |
|---|---|
| Pages (from-to) | 108-112 |
| Number of pages | 5 |
| Journal | Cailiao Kexue yu Gongyi/Material Science and Technology |
| Volume | 19 |
| Issue number | 2 |
| State | Published - Apr 2011 |
Keywords
- Gas-sensing material
- Nitrogen dioxide
- Organic semiconductor
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