Abstract
Cu-doped ZnO samples were prepared by CVD under different growth temperature, and their growth mechanism was analyzed. The samples were characterized by X-ray diffraction patterns, SEM, and PL spectra. XRD patterns confirm that the samples are polycrystal and show single ZnO hexagonal phase. EDS analysis proved that Cu is doped in ZnO samples. Room temperature PL spectra indicate that the intensity ratio of UV to deep energy level emission increases with Cu content in ZnO, which implies the introduction of Cu causes the decreases in the emission related to defects.
| Original language | English |
|---|---|
| Pages (from-to) | 139-143 |
| Number of pages | 5 |
| Journal | Chinese Journal of Luminescence |
| Volume | 34 |
| Issue number | 2 |
| DOIs | |
| State | Published - Feb 2013 |
| Externally published | Yes |
Keywords
- Cu doping
- Photoluminescence
- ZnO
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