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Power integrity analysis for active silicon interposer

  • Chen Zihao*
  • , Lim Teck Guan
  • *Corresponding author for this work
  • Agency for Science, Technology and Research, Singapore

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Active silicon interposer (ATSI) was developed to reduce system cost as well as provide wide bandwidth ATSI package is targeting to accommodate large FPGA with wide I/O. The power integrity of the ATSI is analyzed. The power distribution network (PDN) in the package includes metallic mesh network, TSV and ball grid array (BGA). The line width and the gap of the mesh network are chosen as 75 urn and 25 urn. Small slots are added in the metal line in order to meet the metal density requirement. Six TSVs are designed to connect the metallic mesh network to one BGA through the backside RDL. MIM capacitors are specially embedded under the top metallic layer near The chip micro bump to reduce the PDN impedance. A portion of the PDN with size of 2.4x2.4 mm2 is modelled and simulated to estimate the performance of the whole PDN structure.

Original languageEnglish
Title of host publication2018 IEEE 20th Electronics Packaging Technology Conference, EPTC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages904-909
Number of pages6
ISBN (Electronic)9781538676684
DOIs
StatePublished - Dec 2018
Externally publishedYes
Event20th IEEE Electronics Packaging Technology Conference, EPTC 2018 - Singapore, Singapore
Duration: 4 Dec 20187 Dec 2018

Publication series

Name2018 IEEE 20th Electronics Packaging Technology Conference, EPTC 2018

Conference

Conference20th IEEE Electronics Packaging Technology Conference, EPTC 2018
Country/TerritorySingapore
CitySingapore
Period4/12/187/12/18

Keywords

  • 3D IC
  • Active silicon interposer (ATSI)
  • FPGA
  • Power integrity
  • TSV

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