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Potential analysis in nanoturning of single crystal silicon using molecular dynamics

  • Harbin Institute of Technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Molecular dynamics simulations of the single crystal silicon nanoscale cutting with a diamond tool in ductile mode are carried out to investigate the adhesion phenomenon. After relaxation the silicon atoms on the surface reconstruct to make the potential decrease. The silicon atoms close to the diamond tool have the lowest potential (<-5.5 eV) and form a stable structure with surface atoms on the tool surface.

Original languageEnglish
Title of host publicationAdvanced Materials
Pages3236-3239
Number of pages4
DOIs
StatePublished - 2011
Event2011 International Conference on Chemical Engineering and Advanced Materials, CEAM 2011 - Changsha, China
Duration: 28 May 201130 May 2011

Publication series

NameAdvanced Materials Research
Volume239-242
ISSN (Print)1022-6680

Conference

Conference2011 International Conference on Chemical Engineering and Advanced Materials, CEAM 2011
Country/TerritoryChina
CityChangsha
Period28/05/1130/05/11

Keywords

  • Molecular dynamics
  • Nanoscale cutting
  • Potential energy
  • Single crystal silicon

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