Skip to main navigation Skip to search Skip to main content

Polar and phase domain walls with conducting interfacial states in a Weyl semimetal MoTe2

  • Fei Ting Huang
  • , Seong Joon Lim
  • , Sobhit Singh
  • , Jinwoong Kim
  • , Lunyong Zhang
  • , Jae Wook Kim
  • , Ming Wen Chu
  • , Karin M. Rabe
  • , David Vanderbilt
  • , Sang Wook Cheong*
  • *Corresponding author for this work
  • Rutgers - The State University of New Jersey, New Brunswick
  • Pohang University of Science and Technology
  • National Taiwan University

Research output: Contribution to journalArticlepeer-review

Abstract

Much of the dramatic growth in research on topological materials has focused on topologically protected surface states. While the domain walls of topological materials such as Weyl semimetals with broken inversion or time-reversal symmetry can provide a hunting ground for exploring topological interfacial states, such investigations have received little attention to date. Here, utilizing in-situ cryogenic transmission electron microscopy combined with first-principles calculations, we discover intriguing domain-wall structures in MoTe2, both between polar variants of the low-temperature(T) Weyl phase, and between this and the high-T higher-order topological phase. We demonstrate how polar domain walls can be manipulated with electron beams and show that phase domain walls tend to form superlattice-like structures along the c axis. Scanning tunneling microscopy indicates a possible signature of a conducting hinge state at phase domain walls. Our results open avenues for investigating topological interfacial states and unveiling multifunctional aspects of domain walls in topological materials.

Original languageEnglish
Article number4211
JournalNature Communications
Volume10
Issue number1
DOIs
StatePublished - 1 Dec 2019
Externally publishedYes

Fingerprint

Dive into the research topics of 'Polar and phase domain walls with conducting interfacial states in a Weyl semimetal MoTe2'. Together they form a unique fingerprint.

Cite this