Plasmon-Enhanced Photovoltaic Characteristics of Black Phosphorus-MoS2 Heterojunction

Chaojian Hou; Lijun Yang; Bo Li; Qihan Zhang; Yuefeng Li; Qiuyang Yue; Yang Wang; Zhan Yang; Lixin Dong

doi:10.1109/NANO.2018.8626287

Plasmon-Enhanced Photovoltaic Characteristics of Black Phosphorus-MoS₂ Heterojunction

Chaojian Hou
, Lijun Yang
, Bo Li
, Qihan Zhang
, Yuefeng Li
, Qiuyang Yue
, Yang Wang
, Zhan Yang
, Lixin Dong

Michigan State University
School of Mechatronics Engineering, Harbin Institute of Technology
Soochow University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Heterojunctions based on atomically thin p-type black phosphorus (BP) and n-type MoS₂ present their outstanding performance in electronic and optoelectronic devices. However, the relative weak photovoltaic characteristics offsets their advantages for high-performance phototransistors or solar cells. Herein, a plasmonic optical antenna arrays with 15nm gap were placed on the overlap regions of BP/ MoS₂heterostructures for effective light-harvesting. The results demonstrate the photovoltaic characteristics of BP/ MoS₂heterostructures is clearly enhanced through the hot electrons excited from optical antenna arrays under near-infrared laser (λ=830nm). More important, this enhancement is mainly dominated by effective photo-carrier separation under higher built-in electric field at the reverse bias. In addition, the reduction of photocurrents at the forward bias is ascribed to the strong scattering from plasmon-induced heat. Our findings are expected to be valuable for the development of plasmon-enhanced photodetectors and photovoltaic devices.

Original language	English
Title of host publication	18th International Conference on Nanotechnology, NANO 2018
Publisher	IEEE Computer Society
ISBN (Electronic)	9781538653364
DOIs	https://doi.org/10.1109/NANO.2018.8626287
State	Published - 2 Jul 2018
Externally published	Yes
Event	18th International Conference on Nanotechnology, NANO 2018 - Cork, Ireland Duration: 23 Jul 2018 → 26 Jul 2018

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2018-July
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	18th International Conference on Nanotechnology, NANO 2018
Country/Territory	Ireland
City	Cork
Period	23/07/18 → 26/07/18

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1109/NANO.2018.8626287

Cite this

Hou, C., Yang, L., Li, B., Zhang, Q., Li, Y., Yue, Q., Wang, Y., Yang, Z., & Dong, L. (2018). Plasmon-Enhanced Photovoltaic Characteristics of Black Phosphorus-MoS₂ Heterojunction. In 18th International Conference on Nanotechnology, NANO 2018 Article 8626287 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2018-July). IEEE Computer Society. https://doi.org/10.1109/NANO.2018.8626287

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title = "Plasmon-Enhanced Photovoltaic Characteristics of Black Phosphorus-MoS2 Heterojunction",

abstract = "Heterojunctions based on atomically thin p-type black phosphorus (BP) and n-type MoS2 present their outstanding performance in electronic and optoelectronic devices. However, the relative weak photovoltaic characteristics offsets their advantages for high-performance phototransistors or solar cells. Herein, a plasmonic optical antenna arrays with 15nm gap were placed on the overlap regions of BP/ MoS2heterostructures for effective light-harvesting. The results demonstrate the photovoltaic characteristics of BP/ MoS2heterostructures is clearly enhanced through the hot electrons excited from optical antenna arrays under near-infrared laser (λ=830nm). More important, this enhancement is mainly dominated by effective photo-carrier separation under higher built-in electric field at the reverse bias. In addition, the reduction of photocurrents at the forward bias is ascribed to the strong scattering from plasmon-induced heat. Our findings are expected to be valuable for the development of plasmon-enhanced photodetectors and photovoltaic devices.",

author = "Chaojian Hou and Lijun Yang and Bo Li and Qihan Zhang and Yuefeng Li and Qiuyang Yue and Yang Wang and Zhan Yang and Lixin Dong",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 18th International Conference on Nanotechnology, NANO 2018 ; Conference date: 23-07-2018 Through 26-07-2018",

year = "2018",

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doi = "10.1109/NANO.2018.8626287",

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Hou, C, Yang, L, Li, B, Zhang, Q, Li, Y, Yue, Q, Wang, Y, Yang, Z & Dong, L 2018, Plasmon-Enhanced Photovoltaic Characteristics of Black Phosphorus-MoS₂ Heterojunction. in 18th International Conference on Nanotechnology, NANO 2018., 8626287, Proceedings of the IEEE Conference on Nanotechnology, vol. 2018-July, IEEE Computer Society, 18th International Conference on Nanotechnology, NANO 2018, Cork, Ireland, 23/07/18. https://doi.org/10.1109/NANO.2018.8626287

Plasmon-Enhanced Photovoltaic Characteristics of Black Phosphorus-MoS₂ Heterojunction. / Hou, Chaojian; Yang, Lijun; Li, Bo et al.
18th International Conference on Nanotechnology, NANO 2018. IEEE Computer Society, 2018. 8626287 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2018-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Li, Yuefeng

AU - Yue, Qiuyang

AU - Wang, Yang

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AB - Heterojunctions based on atomically thin p-type black phosphorus (BP) and n-type MoS2 present their outstanding performance in electronic and optoelectronic devices. However, the relative weak photovoltaic characteristics offsets their advantages for high-performance phototransistors or solar cells. Herein, a plasmonic optical antenna arrays with 15nm gap were placed on the overlap regions of BP/ MoS2heterostructures for effective light-harvesting. The results demonstrate the photovoltaic characteristics of BP/ MoS2heterostructures is clearly enhanced through the hot electrons excited from optical antenna arrays under near-infrared laser (λ=830nm). More important, this enhancement is mainly dominated by effective photo-carrier separation under higher built-in electric field at the reverse bias. In addition, the reduction of photocurrents at the forward bias is ascribed to the strong scattering from plasmon-induced heat. Our findings are expected to be valuable for the development of plasmon-enhanced photodetectors and photovoltaic devices.

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