PL studies on ZnO single crystals implanted with thulium ions

M. Peres; J. Wang; M. J. Soares; A. Neves; T. Monteiro; E. Rita; U. Wahl; J. G. Correia; E. Alves

doi:10.1016/j.spmi.2004.09.031

PL studies on ZnO single crystals implanted with thulium ions

M. Peres
, J. Wang
, M. J. Soares
, A. Neves
, T. Monteiro^*
, E. Rita
, U. Wahl
, J. G. Correia
, E. Alves

^*Corresponding author for this work

University of Aveiro
Instituto Tecnológico e Nuclear
University of Lisbon

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

ZnO single crystals implanted with different fluences of thulium ions and subject to different annealing conditions present multiple-Tm related optical centres. After implantation, the Tm ions are incorporated in a highly damaged region, some of them being placed at Zn sites (S_zn). Following annealing, the optical activation of Tm ions is accompanied by a progressive lattice recovery. The main intraionic luminescence, observed with above band gap excitation, is dominated by the near infrared emission due to the ³H₄ → ³H₆ transition and can be observed up to near RT.

Original language	English
Pages (from-to)	747-753
Number of pages	7
Journal	Superlattices and Microstructures
Volume	36
Issue number	4-6
DOIs	https://doi.org/10.1016/j.spmi.2004.09.031
State	Published - Oct 2004
Externally published	Yes
Event	European Materials Research Society 2004, Symposium L. InN - Strasbourg, France Duration: 24 May 2004 → 28 May 2004

Access to Document

10.1016/j.spmi.2004.09.031

Cite this

@article{b8189d2b401d45afb91f80698a6c8b14,

title = "PL studies on ZnO single crystals implanted with thulium ions",

abstract = "ZnO single crystals implanted with different fluences of thulium ions and subject to different annealing conditions present multiple-Tm related optical centres. After implantation, the Tm ions are incorporated in a highly damaged region, some of them being placed at Zn sites (Szn). Following annealing, the optical activation of Tm ions is accompanied by a progressive lattice recovery. The main intraionic luminescence, observed with above band gap excitation, is dominated by the near infrared emission due to the 3H4 → 3H6 transition and can be observed up to near RT.",

author = "M. Peres and J. Wang and Soares, \{M. J.\} and A. Neves and T. Monteiro and E. Rita and U. Wahl and Correia, \{J. G.\} and E. Alves",

year = "2004",

month = oct,

doi = "10.1016/j.spmi.2004.09.031",

language = "英语",

volume = "36",

pages = "747--753",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "4-6",

note = "European Materials Research Society 2004, Symposium L. InN ; Conference date: 24-05-2004 Through 28-05-2004",

}

TY - JOUR

T1 - PL studies on ZnO single crystals implanted with thulium ions

AU - Peres, M.

AU - Wang, J.

AU - Soares, M. J.

AU - Neves, A.

AU - Monteiro, T.

AU - Rita, E.

AU - Wahl, U.

AU - Correia, J. G.

AU - Alves, E.

PY - 2004/10

Y1 - 2004/10

N2 - ZnO single crystals implanted with different fluences of thulium ions and subject to different annealing conditions present multiple-Tm related optical centres. After implantation, the Tm ions are incorporated in a highly damaged region, some of them being placed at Zn sites (Szn). Following annealing, the optical activation of Tm ions is accompanied by a progressive lattice recovery. The main intraionic luminescence, observed with above band gap excitation, is dominated by the near infrared emission due to the 3H4 → 3H6 transition and can be observed up to near RT.

AB - ZnO single crystals implanted with different fluences of thulium ions and subject to different annealing conditions present multiple-Tm related optical centres. After implantation, the Tm ions are incorporated in a highly damaged region, some of them being placed at Zn sites (Szn). Following annealing, the optical activation of Tm ions is accompanied by a progressive lattice recovery. The main intraionic luminescence, observed with above band gap excitation, is dominated by the near infrared emission due to the 3H4 → 3H6 transition and can be observed up to near RT.

UR - https://www.scopus.com/pages/publications/10044281967

U2 - 10.1016/j.spmi.2004.09.031

DO - 10.1016/j.spmi.2004.09.031

M3 - 会议文章

AN - SCOPUS:10044281967

SN - 0749-6036

VL - 36

SP - 747

EP - 753

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4-6

T2 - European Materials Research Society 2004, Symposium L. InN

Y2 - 24 May 2004 through 28 May 2004

ER -

PL studies on ZnO single crystals implanted with thulium ions

Abstract

Access to Document

Other files and links

Fingerprint

Cite this