Piezoresistive effect of polysilicon films at high temperature

Mingxue Huo; Xiaowei Liu; Dan Zhang; Xilian Wang; Minghao Song

Piezoresistive effect of polysilicon films at high temperature

Mingxue Huo^*
, Xiaowei Liu
, Dan Zhang
, Xilian Wang
, Minghao Song

^*Corresponding author for this work

School of Astronautics

Harbin Institute of Technology
Heilongjiang University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The high-temperature piezoresistive effect of polysilicon films is investigated. The relation between gauge factors of heavy doped polysilicon films deposited by LPCVD and temperatures is researched and attained, considering experimental influences of deposition temperature and film thickness on gauge factors. Polysilicon films with a Boron-doped concentration of about 10¹⁹ cm^-3 are experimentally studied from room temperature to 560°C. Experimental results show that the polysilicon piezoresistors can work over 560°C.

Original language	English
Pages (from-to)	2115-2119
Number of pages	5
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	26
Issue number	11
State	Published - Nov 2005

Keywords

Gauge factor
Piezoresistive effect
Polysilicon

Cite this

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title = "Piezoresistive effect of polysilicon films at high temperature",

abstract = "The high-temperature piezoresistive effect of polysilicon films is investigated. The relation between gauge factors of heavy doped polysilicon films deposited by LPCVD and temperatures is researched and attained, considering experimental influences of deposition temperature and film thickness on gauge factors. Polysilicon films with a Boron-doped concentration of about 1019 cm-3 are experimentally studied from room temperature to 560°C. Experimental results show that the polysilicon piezoresistors can work over 560°C.",

keywords = "Gauge factor, Piezoresistive effect, Polysilicon",

author = "Mingxue Huo and Xiaowei Liu and Dan Zhang and Xilian Wang and Minghao Song",

year = "2005",

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language = "英语",

volume = "26",

pages = "2115--2119",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

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TY - JOUR

T1 - Piezoresistive effect of polysilicon films at high temperature

AU - Huo, Mingxue

AU - Liu, Xiaowei

AU - Zhang, Dan

AU - Wang, Xilian

AU - Song, Minghao

PY - 2005/11

Y1 - 2005/11

N2 - The high-temperature piezoresistive effect of polysilicon films is investigated. The relation between gauge factors of heavy doped polysilicon films deposited by LPCVD and temperatures is researched and attained, considering experimental influences of deposition temperature and film thickness on gauge factors. Polysilicon films with a Boron-doped concentration of about 1019 cm-3 are experimentally studied from room temperature to 560°C. Experimental results show that the polysilicon piezoresistors can work over 560°C.

AB - The high-temperature piezoresistive effect of polysilicon films is investigated. The relation between gauge factors of heavy doped polysilicon films deposited by LPCVD and temperatures is researched and attained, considering experimental influences of deposition temperature and film thickness on gauge factors. Polysilicon films with a Boron-doped concentration of about 1019 cm-3 are experimentally studied from room temperature to 560°C. Experimental results show that the polysilicon piezoresistors can work over 560°C.

KW - Gauge factor

KW - Piezoresistive effect

KW - Polysilicon

UR - https://www.scopus.com/pages/publications/33644834667

M3 - 文章

AN - SCOPUS:33644834667

SN - 0253-4177

VL - 26

SP - 2115

EP - 2119

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 11

ER -

Piezoresistive effect of polysilicon films at high temperature

Abstract

Keywords

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