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Photovoltaic properties in an orthorhombic Fe doped KTN single crystal

  • School of Physics, Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

Since the domain wall photovoltaic effect (DW-PVE) is reported in BiFeO3 film, the investigations on photovoltaic properties in ferroelectrics have appealed more and more attention. In this work, we employed two Fe doped KTa1-xNbxO3 (Fe:KTN) single crystals in tetragonal phase and orthorhombic phase, respectively, possessing similar net polarization along [001]C direction, to quantize the contribution on photovoltaic properties from bulk photovoltaic effect (BPVE) and DW-PVE in Fe:KTN. The results show that there are significant enhancements of open-circuit voltages (VOC = -6.0 V, increases over 440%) and short-circuit current density (JSC = 18.5 nA cm-2, increases over 1580%) in orthorhombic Fe:KTN with engineer-domain structure after poled, corresponding to 14.2 mV and 2.2 mV for the single domain wall and bulk region under illumination of 405 nm light (100 mW). It reveals that DW-PVE plays a major role in KTN-based ferroelectrics, indicating an orthorhombic Fe:KTN single crystal is one of the potential photovoltaic materials.

Original languageEnglish
Pages (from-to)34454-34760
Number of pages307
JournalOptics Express
Volume28
Issue number23
DOIs
StatePublished - 9 Nov 2020
Externally publishedYes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

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