Photovoltaic effects in BiVO4/ZnTiO3 multilayer films with high fill factor

Jin Qin; Zuo Tian; Gang Chen; Yu Zhao

doi:10.1016/j.ceramint.2024.10.024

Photovoltaic effects in BiVO₄/ZnTiO₃ multilayer films with high fill factor

Jin Qin
, Zuo Tian
, Gang Chen
, Yu Zhao^*

^*Corresponding author for this work

School of Physics

Harbin University of Science and Technology
College of Physics
Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Bismuth-based semiconductor materials have garnered significant attention because of their appropriate optical bandgap and substantial photoelectric conversion efficiency. Enhancing the photocurrent and fill factor of photovoltaic films is essential for developing high-performance optoelectronic devices. In this study, high-performance BiVO₄-ZnTiO₃ multilayer films were fabricated using a straightforward sol-gel method, where the incorporation of ZnTiO₃ films significantly improved the photovoltaic performance of BiVO₄. Through structural design aimed at enhancing light utilization, the BiVO₄-ZnTiO₃ multilayer film achieved a photocurrent density of 1.9 mA/cm² at 450 nm, along with a fill factor of 46.8 % in the composite multilayer structure. The improvement in film performance is attributed to the overall multilayer stacking effect. This study offers a novel approach for utilizing bismuth-based semiconductors in optoelectronics.

Original language	English
Pages (from-to)	51119-51127
Number of pages	9
Journal	Ceramics International
Volume	50
Issue number	23
DOIs	https://doi.org/10.1016/j.ceramint.2024.10.024
State	Published - 1 Dec 2024

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

BiVO
Multilayer films
Photodetector
Photovoltaic effect
ZnTiO

Access to Document

10.1016/j.ceramint.2024.10.024

Cite this

@article{a42cca2868804c8290e97e0b15bcbac9,

title = "Photovoltaic effects in BiVO4/ZnTiO3 multilayer films with high fill factor",

abstract = "Bismuth-based semiconductor materials have garnered significant attention because of their appropriate optical bandgap and substantial photoelectric conversion efficiency. Enhancing the photocurrent and fill factor of photovoltaic films is essential for developing high-performance optoelectronic devices. In this study, high-performance BiVO4-ZnTiO3 multilayer films were fabricated using a straightforward sol-gel method, where the incorporation of ZnTiO3 films significantly improved the photovoltaic performance of BiVO4. Through structural design aimed at enhancing light utilization, the BiVO4-ZnTiO3 multilayer film achieved a photocurrent density of 1.9 mA/cm2 at 450 nm, along with a fill factor of 46.8 \% in the composite multilayer structure. The improvement in film performance is attributed to the overall multilayer stacking effect. This study offers a novel approach for utilizing bismuth-based semiconductors in optoelectronics.",

keywords = "BiVO, Multilayer films, Photodetector, Photovoltaic effect, ZnTiO",

author = "Jin Qin and Zuo Tian and Gang Chen and Yu Zhao",

note = "Publisher Copyright: {\textcopyright} 2024",

year = "2024",

month = dec,

day = "1",

doi = "10.1016/j.ceramint.2024.10.024",

language = "英语",

volume = "50",

pages = "51119--51127",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Ltd",

number = "23",

}

TY - JOUR

T1 - Photovoltaic effects in BiVO4/ZnTiO3 multilayer films with high fill factor

AU - Qin, Jin

AU - Tian, Zuo

AU - Chen, Gang

AU - Zhao, Yu

PY - 2024/12/1

Y1 - 2024/12/1

N2 - Bismuth-based semiconductor materials have garnered significant attention because of their appropriate optical bandgap and substantial photoelectric conversion efficiency. Enhancing the photocurrent and fill factor of photovoltaic films is essential for developing high-performance optoelectronic devices. In this study, high-performance BiVO4-ZnTiO3 multilayer films were fabricated using a straightforward sol-gel method, where the incorporation of ZnTiO3 films significantly improved the photovoltaic performance of BiVO4. Through structural design aimed at enhancing light utilization, the BiVO4-ZnTiO3 multilayer film achieved a photocurrent density of 1.9 mA/cm2 at 450 nm, along with a fill factor of 46.8 % in the composite multilayer structure. The improvement in film performance is attributed to the overall multilayer stacking effect. This study offers a novel approach for utilizing bismuth-based semiconductors in optoelectronics.

AB - Bismuth-based semiconductor materials have garnered significant attention because of their appropriate optical bandgap and substantial photoelectric conversion efficiency. Enhancing the photocurrent and fill factor of photovoltaic films is essential for developing high-performance optoelectronic devices. In this study, high-performance BiVO4-ZnTiO3 multilayer films were fabricated using a straightforward sol-gel method, where the incorporation of ZnTiO3 films significantly improved the photovoltaic performance of BiVO4. Through structural design aimed at enhancing light utilization, the BiVO4-ZnTiO3 multilayer film achieved a photocurrent density of 1.9 mA/cm2 at 450 nm, along with a fill factor of 46.8 % in the composite multilayer structure. The improvement in film performance is attributed to the overall multilayer stacking effect. This study offers a novel approach for utilizing bismuth-based semiconductors in optoelectronics.

KW - BiVO

KW - Multilayer films

KW - Photodetector

KW - Photovoltaic effect

KW - ZnTiO

UR - https://www.scopus.com/pages/publications/85205601588

U2 - 10.1016/j.ceramint.2024.10.024

DO - 10.1016/j.ceramint.2024.10.024

M3 - 文章

AN - SCOPUS:85205601588

SN - 0272-8842

VL - 50

SP - 51119

EP - 51127

JO - Ceramics International

JF - Ceramics International

IS - 23

ER -