Photoelectric response of Schottky barrier in La0.7 Ca0.3 Mn O3 Nb:SrTi O3 heterojunctions

Z. Luo; J. Gao; A. B. Djurišić; C. T. Yip; G. B. Zhang

doi:10.1063/1.2920765

Photoelectric response of Schottky barrier in La0.7 Ca0.3 Mn O3 Nb:SrTi O3 heterojunctions

Z. Luo
, J. Gao^*
, A. B. Djurišić
, C. T. Yip
, G. B. Zhang

^*Corresponding author for this work

The University of Hong Kong
University of Science and Technology of China

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Heterojunctions composed of La0.7 Ca0.3 Mn O3 and 0.05 wt % Nb-doped SrTi O3 were fabricated using pulse laser deposition. The current-voltage characteristics of such heterojunctions can be described by tunneling with an effective Schottky barrier. These junctions showed significant response to ultraviolet and visible light. Band-to-band and internal photoemission were characterized by photoelectric experiments. A quantum efficiency of about 86% was observed at an incident energy of ∼3.95 eV, which corresponds to the band-to-band excitation of electrons in Nb:SrTi O3. From the internal photoemission, the height of Schottky barrier was determined as 1.64 eV.

Original language	English
Article number	182501
Journal	Applied Physics Letters
Volume	92
Issue number	18
DOIs	https://doi.org/10.1063/1.2920765
State	Published - 2008
Externally published	Yes

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@article{3711ee858d0446a39eeb3c7653521986,

title = "Photoelectric response of Schottky barrier in La0.7 Ca0.3 Mn O3 Nb:SrTi O3 heterojunctions",

abstract = "Heterojunctions composed of La0.7 Ca0.3 Mn O3 and 0.05 wt \% Nb-doped SrTi O3 were fabricated using pulse laser deposition. The current-voltage characteristics of such heterojunctions can be described by tunneling with an effective Schottky barrier. These junctions showed significant response to ultraviolet and visible light. Band-to-band and internal photoemission were characterized by photoelectric experiments. A quantum efficiency of about 86\% was observed at an incident energy of ∼3.95 eV, which corresponds to the band-to-band excitation of electrons in Nb:SrTi O3. From the internal photoemission, the height of Schottky barrier was determined as 1.64 eV.",

author = "Z. Luo and J. Gao and Djuri{\v s}i{\'c}, \{A. B.\} and Yip, \{C. T.\} and Zhang, \{G. B.\}",

year = "2008",

doi = "10.1063/1.2920765",

language = "英语",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

}

TY - JOUR

T1 - Photoelectric response of Schottky barrier in La0.7 Ca0.3 Mn O3 Nb:SrTi O3 heterojunctions

AU - Luo, Z.

AU - Gao, J.

AU - Djurišić, A. B.

AU - Yip, C. T.

AU - Zhang, G. B.

PY - 2008

Y1 - 2008

N2 - Heterojunctions composed of La0.7 Ca0.3 Mn O3 and 0.05 wt % Nb-doped SrTi O3 were fabricated using pulse laser deposition. The current-voltage characteristics of such heterojunctions can be described by tunneling with an effective Schottky barrier. These junctions showed significant response to ultraviolet and visible light. Band-to-band and internal photoemission were characterized by photoelectric experiments. A quantum efficiency of about 86% was observed at an incident energy of ∼3.95 eV, which corresponds to the band-to-band excitation of electrons in Nb:SrTi O3. From the internal photoemission, the height of Schottky barrier was determined as 1.64 eV.

AB - Heterojunctions composed of La0.7 Ca0.3 Mn O3 and 0.05 wt % Nb-doped SrTi O3 were fabricated using pulse laser deposition. The current-voltage characteristics of such heterojunctions can be described by tunneling with an effective Schottky barrier. These junctions showed significant response to ultraviolet and visible light. Band-to-band and internal photoemission were characterized by photoelectric experiments. A quantum efficiency of about 86% was observed at an incident energy of ∼3.95 eV, which corresponds to the band-to-band excitation of electrons in Nb:SrTi O3. From the internal photoemission, the height of Schottky barrier was determined as 1.64 eV.

UR - https://www.scopus.com/pages/publications/43349102714

U2 - 10.1063/1.2920765

DO - 10.1063/1.2920765

M3 - 文章

AN - SCOPUS:43349102714

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 182501

ER -

Photoelectric response of Schottky barrier in La0.7 Ca0.3 Mn O3 Nb:SrTi O3 heterojunctions

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