Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In2Se3 Nanosheets

Wei Feng; Feng Gao; Yunxia Hu; Mingjin Dai; He Liu; Lifeng Wang; Pingan Hu

doi:10.1021/acsami.8b10194

Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In₂Se₃ Nanosheets

Wei Feng^*
, Feng Gao
, Yunxia Hu
, Mingjin Dai
, He Liu
, Lifeng Wang
, Pingan Hu

^*Corresponding author for this work

School of Materials Science and Engineering

North East Forestry University
Harbin Institute of Technology
Deakin University

Research output: Contribution to journal › Article › peer-review

74 Scopus citations

Abstract

Here, we report electronic and optoelectronic performance of multilayer In₂Se₃ are effectively regulated by phase engineering. The electron mobility is increased to 22.8 cm² V^-1 s^-1 for β-In₂Se₃ FETs, which is 18 times higher than 1.26 cm² V^-1 s^-1 of α-In₂Se₃ FETs. The enhanced electronic performance is attributed to larger carrier sheet density and lower contact resistance. Multilayer β-In₂Se₃ photodetector exhibits an ultrahigh responsivity of 8.8 × 10⁴ A/W under 800 nm illumination, which is 574 times larger than 154.4 A/W of α-In₂Se₃ photodetector. Our results demonstrate phase-engineering is a valid way to tune and further optimize electronic and optoelectronic performance of multilayer In₂Se₃ nanodevices.

Original language	English
Pages (from-to)	27584-27588
Number of pages	5
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	33
DOIs	https://doi.org/10.1021/acsami.8b10194
State	Published - 22 Aug 2018

Keywords

InSe
field-effect transistors
phase-engineering
photodetectors
thermal-annealing

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10.1021/acsami.8b10194

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title = "Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In2Se3 Nanosheets",

abstract = "Here, we report electronic and optoelectronic performance of multilayer In2Se3 are effectively regulated by phase engineering. The electron mobility is increased to 22.8 cm2 V-1 s-1 for β-In2Se3 FETs, which is 18 times higher than 1.26 cm2 V-1 s-1 of α-In2Se3 FETs. The enhanced electronic performance is attributed to larger carrier sheet density and lower contact resistance. Multilayer β-In2Se3 photodetector exhibits an ultrahigh responsivity of 8.8 × 104 A/W under 800 nm illumination, which is 574 times larger than 154.4 A/W of α-In2Se3 photodetector. Our results demonstrate phase-engineering is a valid way to tune and further optimize electronic and optoelectronic performance of multilayer In2Se3 nanodevices.",

keywords = "InSe, field-effect transistors, phase-engineering, photodetectors, thermal-annealing",

author = "Wei Feng and Feng Gao and Yunxia Hu and Mingjin Dai and He Liu and Lifeng Wang and Pingan Hu",

note = "Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

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doi = "10.1021/acsami.8b10194",

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volume = "10",

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T1 - Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In2Se3 Nanosheets

AU - Feng, Wei

AU - Gao, Feng

AU - Hu, Yunxia

AU - Dai, Mingjin

AU - Liu, He

AU - Wang, Lifeng

AU - Hu, Pingan

PY - 2018/8/22

Y1 - 2018/8/22

N2 - Here, we report electronic and optoelectronic performance of multilayer In2Se3 are effectively regulated by phase engineering. The electron mobility is increased to 22.8 cm2 V-1 s-1 for β-In2Se3 FETs, which is 18 times higher than 1.26 cm2 V-1 s-1 of α-In2Se3 FETs. The enhanced electronic performance is attributed to larger carrier sheet density and lower contact resistance. Multilayer β-In2Se3 photodetector exhibits an ultrahigh responsivity of 8.8 × 104 A/W under 800 nm illumination, which is 574 times larger than 154.4 A/W of α-In2Se3 photodetector. Our results demonstrate phase-engineering is a valid way to tune and further optimize electronic and optoelectronic performance of multilayer In2Se3 nanodevices.

AB - Here, we report electronic and optoelectronic performance of multilayer In2Se3 are effectively regulated by phase engineering. The electron mobility is increased to 22.8 cm2 V-1 s-1 for β-In2Se3 FETs, which is 18 times higher than 1.26 cm2 V-1 s-1 of α-In2Se3 FETs. The enhanced electronic performance is attributed to larger carrier sheet density and lower contact resistance. Multilayer β-In2Se3 photodetector exhibits an ultrahigh responsivity of 8.8 × 104 A/W under 800 nm illumination, which is 574 times larger than 154.4 A/W of α-In2Se3 photodetector. Our results demonstrate phase-engineering is a valid way to tune and further optimize electronic and optoelectronic performance of multilayer In2Se3 nanodevices.

KW - InSe

KW - field-effect transistors

KW - phase-engineering

KW - photodetectors

KW - thermal-annealing

UR - https://www.scopus.com/pages/publications/85051939954

U2 - 10.1021/acsami.8b10194

DO - 10.1021/acsami.8b10194

M3 - 文章

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SN - 1944-8244

VL - 10

SP - 27584

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JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 33

ER -

Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In₂Se₃ Nanosheets

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Keywords

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