Oxidation effect on the ultrafast carrier dynamics of GaTe studied by terahertz spectroscopy

Hong Li; Qiao Wang; Qibing Li; Kai Zhang; Enen Li; Tianwu Wang; Guangyou Fang; Yirong Wu; Ping An Hu

doi:10.1364/OME.497735

Oxidation effect on the ultrafast carrier dynamics of GaTe studied by terahertz spectroscopy

Hong Li
, Qiao Wang
, Qibing Li
, Kai Zhang
, Enen Li
, Tianwu Wang
, Guangyou Fang
, Yirong Wu
, Ping An Hu

CAS - Aerospace Information Research Institute
Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics
School of Chemistry and Chemical Engineering, Harbin Institute of Technology
Chinese Academy of Sciences
University of Chinese Academy of Sciences
Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Effect of oxygen on the physical properties of GaTe is investigated by optical pump–terahertz probe spectroscopy. Oxygen erosion in GaTe leads to significant reductions in lifetime and transient conductivity. Terahertz emission is also evaluated. Terahertz radiation intensity gradually dies away with increasing air exposing time. Such phenomena are attributed to the trapping of photogenerated carriers by oxygen–introduced defects, which can result in the reduction of the carrier density, acceleration of the photocarrier relaxation, and impediment of the terahertz emission.

Original language	English
Pages (from-to)	2895-2903
Number of pages	9
Journal	Optical Materials Express
Volume	13
Issue number	10
DOIs	https://doi.org/10.1364/OME.497735
State	Published - 1 Oct 2023
Externally published	Yes

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@article{6d083cd360644d36ac4fd12f4eecaf8e,

title = "Oxidation effect on the ultrafast carrier dynamics of GaTe studied by terahertz spectroscopy",

abstract = "Effect of oxygen on the physical properties of GaTe is investigated by optical pump{\textendash}terahertz probe spectroscopy. Oxygen erosion in GaTe leads to significant reductions in lifetime and transient conductivity. Terahertz emission is also evaluated. Terahertz radiation intensity gradually dies away with increasing air exposing time. Such phenomena are attributed to the trapping of photogenerated carriers by oxygen{\textendash}introduced defects, which can result in the reduction of the carrier density, acceleration of the photocarrier relaxation, and impediment of the terahertz emission.",

author = "Hong Li and Qiao Wang and Qibing Li and Kai Zhang and Enen Li and Tianwu Wang and Guangyou Fang and Yirong Wu and Hu, \{Ping An\}",

note = "Publisher Copyright: {\textcopyright} 2023 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement.",

year = "2023",

month = oct,

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doi = "10.1364/OME.497735",

language = "英语",

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TY - JOUR

T1 - Oxidation effect on the ultrafast carrier dynamics of GaTe studied by terahertz spectroscopy

AU - Li, Hong

AU - Wang, Qiao

AU - Li, Qibing

AU - Zhang, Kai

AU - Li, Enen

AU - Wang, Tianwu

AU - Fang, Guangyou

AU - Wu, Yirong

AU - Hu, Ping An

PY - 2023/10/1

Y1 - 2023/10/1

N2 - Effect of oxygen on the physical properties of GaTe is investigated by optical pump–terahertz probe spectroscopy. Oxygen erosion in GaTe leads to significant reductions in lifetime and transient conductivity. Terahertz emission is also evaluated. Terahertz radiation intensity gradually dies away with increasing air exposing time. Such phenomena are attributed to the trapping of photogenerated carriers by oxygen–introduced defects, which can result in the reduction of the carrier density, acceleration of the photocarrier relaxation, and impediment of the terahertz emission.

AB - Effect of oxygen on the physical properties of GaTe is investigated by optical pump–terahertz probe spectroscopy. Oxygen erosion in GaTe leads to significant reductions in lifetime and transient conductivity. Terahertz emission is also evaluated. Terahertz radiation intensity gradually dies away with increasing air exposing time. Such phenomena are attributed to the trapping of photogenerated carriers by oxygen–introduced defects, which can result in the reduction of the carrier density, acceleration of the photocarrier relaxation, and impediment of the terahertz emission.

UR - https://www.scopus.com/pages/publications/85174605802

U2 - 10.1364/OME.497735

DO - 10.1364/OME.497735

M3 - 文章

AN - SCOPUS:85174605802

SN - 2159-3930

VL - 13

SP - 2895

EP - 2903

JO - Optical Materials Express

JF - Optical Materials Express

IS - 10

ER -

Oxidation effect on the ultrafast carrier dynamics of GaTe studied by terahertz spectroscopy

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