Oxidation behavior of zirconium diboride-silicon carbide at 1800 °C

Jiecai Han; Ping Hu; Xinghong Zhang; Songhe Meng

doi:10.1016/j.scriptamat.2007.07.009

Oxidation behavior of zirconium diboride-silicon carbide at 1800 °C

Jiecai Han
, Ping Hu^*
, Xinghong Zhang
, Songhe Meng

^*Corresponding author for this work

School of Astronautics

Research output: Contribution to journal › Article › peer-review

150 Scopus citations

Abstract

ZrB₂-based ultrahigh-temperature ceramics, including 20 and 30 vol.% SiC, have been investigated at 1800 °C under different oxygen partial pressures. ZrB₂-30 vol.% SiC exhibited the highest oxidation resistance under high oxygen partial pressure, whereas it displayed the lowest oxidation resistance under low oxygen partial pressure. The thickness of the oxide scale of ZrB₂ containing either 20 or 30 vol.% SiC increased with decreasing oxygen partial pressure. Moreover, this trend was intensified by increasing the SiC content.

Original language	English
Pages (from-to)	825-828
Number of pages	4
Journal	Scripta Materialia
Volume	57
Issue number	9
DOIs	https://doi.org/10.1016/j.scriptamat.2007.07.009
State	Published - Nov 2007

Keywords

Oxidation behavior
SiC
ZrB

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10.1016/j.scriptamat.2007.07.009

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title = "Oxidation behavior of zirconium diboride-silicon carbide at 1800 °C",

abstract = "ZrB2-based ultrahigh-temperature ceramics, including 20 and 30 vol.\% SiC, have been investigated at 1800 °C under different oxygen partial pressures. ZrB2-30 vol.\% SiC exhibited the highest oxidation resistance under high oxygen partial pressure, whereas it displayed the lowest oxidation resistance under low oxygen partial pressure. The thickness of the oxide scale of ZrB2 containing either 20 or 30 vol.\% SiC increased with decreasing oxygen partial pressure. Moreover, this trend was intensified by increasing the SiC content.",

keywords = "Oxidation behavior, SiC, ZrB",

author = "Jiecai Han and Ping Hu and Xinghong Zhang and Songhe Meng",

year = "2007",

month = nov,

doi = "10.1016/j.scriptamat.2007.07.009",

language = "英语",

volume = "57",

pages = "825--828",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Acta Materialia Inc",

number = "9",

}

TY - JOUR

T1 - Oxidation behavior of zirconium diboride-silicon carbide at 1800 °C

AU - Han, Jiecai

AU - Hu, Ping

AU - Zhang, Xinghong

AU - Meng, Songhe

PY - 2007/11

Y1 - 2007/11

N2 - ZrB2-based ultrahigh-temperature ceramics, including 20 and 30 vol.% SiC, have been investigated at 1800 °C under different oxygen partial pressures. ZrB2-30 vol.% SiC exhibited the highest oxidation resistance under high oxygen partial pressure, whereas it displayed the lowest oxidation resistance under low oxygen partial pressure. The thickness of the oxide scale of ZrB2 containing either 20 or 30 vol.% SiC increased with decreasing oxygen partial pressure. Moreover, this trend was intensified by increasing the SiC content.

AB - ZrB2-based ultrahigh-temperature ceramics, including 20 and 30 vol.% SiC, have been investigated at 1800 °C under different oxygen partial pressures. ZrB2-30 vol.% SiC exhibited the highest oxidation resistance under high oxygen partial pressure, whereas it displayed the lowest oxidation resistance under low oxygen partial pressure. The thickness of the oxide scale of ZrB2 containing either 20 or 30 vol.% SiC increased with decreasing oxygen partial pressure. Moreover, this trend was intensified by increasing the SiC content.

KW - Oxidation behavior

KW - SiC

KW - ZrB

UR - https://www.scopus.com/pages/publications/34547755179

U2 - 10.1016/j.scriptamat.2007.07.009

DO - 10.1016/j.scriptamat.2007.07.009

M3 - 文章

AN - SCOPUS:34547755179

SN - 1359-6462

VL - 57

SP - 825

EP - 828

JO - Scripta Materialia

JF - Scripta Materialia

IS - 9

ER -

Oxidation behavior of zirconium diboride-silicon carbide at 1800 °C

Abstract

Keywords

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