Origin of Temperature Coefficient of Resonance Frequency in Rutile Ti1−xZrxO2 Microwave Ceramics

Izaz Khan; Aneela Khan; Raz Muhammad; Minmin Mao; Dandan Han; Kaixin Song; Wen Lei; Dawei Wang

doi:10.3390/ceramics7020046

Origin of Temperature Coefficient of Resonance Frequency in Rutile Ti_1−xZr_xO₂ Microwave Ceramics

Izaz Khan
, Aneela Khan
, Raz Muhammad^*
, Minmin Mao
, Dandan Han
, Kaixin Song
, Wen Lei
, Dawei Wang^*

^*Corresponding author for this work

Abdul Wali Khan University Mardan
Hangzhou Dianzi University
Jilin Institute of Chemical Technology
Huazhong University of Science and Technology
Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this study, we report the effect of Zr⁴⁺ doping on the optical energy gap and microwave dielectric properties of rutile TiO₂. Rietveld analysis explicitly confirmed that Zr⁴⁺ occupies the octahedral site, forming a single-phase tetragonal structure below the solubility limit (x < 0.10). Notably, at x = 0.025, a significant enhancement in Q × f_o was observed. This enhancement was attributed to the reduction in dielectric loss, associated with a decrease in oxygen vacancies and a lower concentration of Ti³⁺ paramagnetic centers. This conclusion was supported by Raman and electron paramagnetic resonance spectroscopy, respectively. The origin of high τ_f in rutile Ti_1−xZr_xO₂ is explained on the basis of the octahedral distortion/tetragonality ratio, covalency, and bond strength.

Original language	English
Pages (from-to)	698-711
Number of pages	14
Journal	Ceramics
Volume	7
Issue number	2
DOIs	https://doi.org/10.3390/ceramics7020046
State	Published - Jun 2024
Externally published	Yes

Keywords

Zr-doped TiO
microwave dielectric properties
rutile

Access to Document

10.3390/ceramics7020046

Cite this

@article{a386209e2f5c4120a4204cd6b9d29252,

title = "Origin of Temperature Coefficient of Resonance Frequency in Rutile Ti1−xZrxO2 Microwave Ceramics",

abstract = "In this study, we report the effect of Zr4+ doping on the optical energy gap and microwave dielectric properties of rutile TiO2. Rietveld analysis explicitly confirmed that Zr4+ occupies the octahedral site, forming a single-phase tetragonal structure below the solubility limit (x < 0.10). Notably, at x = 0.025, a significant enhancement in Q {\texttimes} fo was observed. This enhancement was attributed to the reduction in dielectric loss, associated with a decrease in oxygen vacancies and a lower concentration of Ti3+ paramagnetic centers. This conclusion was supported by Raman and electron paramagnetic resonance spectroscopy, respectively. The origin of high τf in rutile Ti1−xZrxO2 is explained on the basis of the octahedral distortion/tetragonality ratio, covalency, and bond strength.",

keywords = "Zr-doped TiO, microwave dielectric properties, rutile",

author = "Izaz Khan and Aneela Khan and Raz Muhammad and Minmin Mao and Dandan Han and Kaixin Song and Wen Lei and Dawei Wang",

note = "Publisher Copyright: {\textcopyright} 2024 by the authors.",

year = "2024",

month = jun,

doi = "10.3390/ceramics7020046",

language = "英语",

volume = "7",

pages = "698--711",

journal = "Ceramics",

issn = "2571-6131",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "2",

}

TY - JOUR

T1 - Origin of Temperature Coefficient of Resonance Frequency in Rutile Ti1−xZrxO2 Microwave Ceramics

AU - Khan, Izaz

AU - Khan, Aneela

AU - Muhammad, Raz

AU - Mao, Minmin

AU - Han, Dandan

AU - Song, Kaixin

AU - Lei, Wen

AU - Wang, Dawei

PY - 2024/6

Y1 - 2024/6

N2 - In this study, we report the effect of Zr4+ doping on the optical energy gap and microwave dielectric properties of rutile TiO2. Rietveld analysis explicitly confirmed that Zr4+ occupies the octahedral site, forming a single-phase tetragonal structure below the solubility limit (x < 0.10). Notably, at x = 0.025, a significant enhancement in Q × fo was observed. This enhancement was attributed to the reduction in dielectric loss, associated with a decrease in oxygen vacancies and a lower concentration of Ti3+ paramagnetic centers. This conclusion was supported by Raman and electron paramagnetic resonance spectroscopy, respectively. The origin of high τf in rutile Ti1−xZrxO2 is explained on the basis of the octahedral distortion/tetragonality ratio, covalency, and bond strength.

AB - In this study, we report the effect of Zr4+ doping on the optical energy gap and microwave dielectric properties of rutile TiO2. Rietveld analysis explicitly confirmed that Zr4+ occupies the octahedral site, forming a single-phase tetragonal structure below the solubility limit (x < 0.10). Notably, at x = 0.025, a significant enhancement in Q × fo was observed. This enhancement was attributed to the reduction in dielectric loss, associated with a decrease in oxygen vacancies and a lower concentration of Ti3+ paramagnetic centers. This conclusion was supported by Raman and electron paramagnetic resonance spectroscopy, respectively. The origin of high τf in rutile Ti1−xZrxO2 is explained on the basis of the octahedral distortion/tetragonality ratio, covalency, and bond strength.

KW - Zr-doped TiO

KW - microwave dielectric properties

KW - rutile

UR - https://www.scopus.com/pages/publications/85197157407

U2 - 10.3390/ceramics7020046

DO - 10.3390/ceramics7020046

M3 - 文章

AN - SCOPUS:85197157407

SN - 2571-6131

VL - 7

SP - 698

EP - 711

JO - Ceramics

JF - Ceramics

IS - 2

ER -

Origin of Temperature Coefficient of Resonance Frequency in Rutile Ti_1−xZr_xO₂ Microwave Ceramics

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this