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Organic magnetic tunnel junctions: The role of metal-molecule interface

  • S. H. Liang*
  • , D. P. Liu
  • , L. L. Tao
  • , X. F. Han
  • , Hong Guo
  • *Corresponding author for this work
  • CAS - Institute of Physics
  • McGill University

Research output: Contribution to journalArticlepeer-review

Abstract

We report a first-principles theoretical investigation of spin-polarized quantum transport in organic magnetic tunnel junctions (OMTJs) to provide a microscopic understanding on the sign of the tunnel magnetoresistance ratio (TMR). We consider two different OMTJs, formed by sandwiching 1-stearic acid radicals (1-SAR) or 1,18-stearic diacid radicals (1,18-SDR) between two Ni electrodes. Even though the main difference between them is only on one of the Ni/molecule contacts, such a structure difference is found to induce a significant sign change of the TMR. The TMR is negative for 1-SAR at -19.6%, but is positive for 1,18-SDR at 13.7%. By investigating the concept of scattering density of states (SDOS), we found that scattering processes of p electrons at the Ni/molecule interface determines the sign of TMR. Based on spin polarization of the SDOS, we extend the Julliere model to explain both the sign and the value of the TMR qualitatively and semiquantitatively. It is concluded that understanding spin-polarized quantum transport in organic magnetic tunnel junction requires a comprehensive knowledge of the electronic structures of the molecule, the metal electrode, and the metal-molecule contacts.

Original languageEnglish
Article number224419
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume86
Issue number22
DOIs
StatePublished - 26 Dec 2012
Externally publishedYes

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