Abstract
In this paper, a subtractive method is proposed for the optimization of NiCr thin film resistor (TFR) in steady of a method of depositing the bottom metal layer from the semi-additive method. The variations of the maximum sheet resistances in the optimized NiCr TFR are within 2.88% and the 3-sigma variation is around 0.87%, which are much higher accurate than the previous fabricated TFRs demonstrated in the lately published papers. The proposed manufacturing process is an optimal solution for manufacturing the NiCr TFRs in the advanced integrated passive devices (IPDs) process on the semi-insulating-GaAs substrate that require stringent size and volumetric efficiency.
| Original language | English |
|---|---|
| Pages (from-to) | 279-283 |
| Number of pages | 5 |
| Journal | IETE Journal of Research |
| Volume | 58 |
| Issue number | 4 |
| DOIs | |
| State | Published - Jul 2012 |
| Externally published | Yes |
Keywords
- Integrated passive device
- SI-GaAs substrate
- Thin film resistor
Fingerprint
Dive into the research topics of 'Optimization of NiCr thin film resistor on semi-insulating-GaAs substrate in advanced integrated passive device process'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver