Abstract
Optical properties of N-doped and non-doped ZnO film were investigated using plasma-assisted metallorganic chemical vapor deposition (MOCVD). The absorption measurement of the samples was conducted using UV-3100 recording photometer while Raman measurement of the samples was conducted in back-scattering configuration using 514.5 nm Ar+ laser line excitation. The results show that N-doped ZnO film is in better crystal quality and optical characteristic and the resistivity of N-doped film is higher with respect to non-doped ZnO film.
| Original language | English |
|---|---|
| Pages | I540-I541 |
| State | Published - 2001 |
| Externally published | Yes |
| Event | 4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan Duration: 15 Jul 2001 → 19 Jul 2001 |
Conference
| Conference | 4th Pacific Rim Conference on Lasers and Electro-Optics |
|---|---|
| Country/Territory | Japan |
| City | Chiba |
| Period | 15/07/01 → 19/07/01 |
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