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Optical properties of ZNO film by plasma-assisted MOCVD

  • Xinqiang Wang*
  • , Shuren Yang
  • , Jinzhong Wang
  • , Jingzhi Yin
  • , Xiuying Jiang
  • , Guotong Du
  • *Corresponding author for this work
  • Jilin University

Research output: Contribution to conferencePaperpeer-review

Abstract

Optical properties of N-doped and non-doped ZnO film were investigated using plasma-assisted metallorganic chemical vapor deposition (MOCVD). The absorption measurement of the samples was conducted using UV-3100 recording photometer while Raman measurement of the samples was conducted in back-scattering configuration using 514.5 nm Ar+ laser line excitation. The results show that N-doped ZnO film is in better crystal quality and optical characteristic and the resistivity of N-doped film is higher with respect to non-doped ZnO film.

Original languageEnglish
PagesI540-I541
StatePublished - 2001
Externally publishedYes
Event4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan
Duration: 15 Jul 200119 Jul 2001

Conference

Conference4th Pacific Rim Conference on Lasers and Electro-Optics
Country/TerritoryJapan
CityChiba
Period15/07/0119/07/01

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