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Optical nonlinearities and carrier dynamics in Fe doped GaN single crystal

  • Yu Fang
  • , Junyi Yang
  • , Zhongguo Li
  • , Yong Yang
  • , Xingzhi Wu
  • , Yinglin Song*
  • , Feng Zhou
  • *Corresponding author for this work
  • Soochow University
  • Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

Optical nonlinearities and transient dynamics of Fe doped GaN (GaN:Fe) were studied by Z-scan and pump-probe with phase object techniques under picosecond and nanosecond at 532 nm. From the pump-probe results, an additional decay pathway subsequent to two photon excitation was observed due to the carrier trapping of Fe3+/Fe2+ deep acceptors. The trapping state in the band gap results in a pronounced modulation to nonlinear responses of GaN:Fe compared to that of undoped GaN. With an effective three-level model as well as carrier trapping effect we described the photo-physical dynamics in GaN:Fe unambiguously.

Original languageEnglish
Article number161909
JournalApplied Physics Letters
Volume105
Issue number16
DOIs
StatePublished - 20 Oct 2014

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