Optical constants of SiO2 films deposited on Si substrates

Yi Qin Ji; Yu Gang Jiang; Hua Song Liu; Li Shuan Wang; Dan Dan Liu; Cheng Hui Jiang; Rong Wei Fan; De Ying Chen

doi:10.1088/0256-307X/31/4/046401

Optical constants of SiO₂ films deposited on Si substrates

Yi Qin Ji^*
, Yu Gang Jiang
, Hua Song Liu
, Li Shuan Wang
, Dan Dan Liu
, Cheng Hui Jiang
, Rong Wei Fan
, De Ying Chen

^*Corresponding author for this work

School of Astronautics

Tianjin Jinhang Institute of Technical Physics
Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

SiO₂ films were deposited on single-crystalline silicon substrates by ion beam sputtering technology. Optical constants of SiO ₂ films are calculated from spectroscopic ellipsometry data, transmittance spectra and reflectance spectra by WVASE32 software, and the best fitted method is obtained for calculating optical constants of dielectric materials in the ultraviolet-visible-infrared (UV-VIS-IR) range. In the UV-VIS-NIR spectral range, refractive indices of SiO₂ films are calculated separately by both ellipsometry data and reflectance spectra, and the obtained results are almost the same. Complex dielectric functions of SiO ₂ films in the IR spectral range are accurately calculated with infrared transmission spectra using the GenOsc model. The obtained accuracy complex refractive index of SiO₂ films in the wavelength region from 0.19 μm to 25 μm is of great importance for the design of high quality coatings, such as ultra-low loss coating.

Original language	English
Article number	046401
Journal	Chinese Physics Letters
Volume	31
Issue number	4
DOIs	https://doi.org/10.1088/0256-307X/31/4/046401
State	Published - Apr 2014

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title = "Optical constants of SiO2 films deposited on Si substrates",

abstract = "SiO2 films were deposited on single-crystalline silicon substrates by ion beam sputtering technology. Optical constants of SiO 2 films are calculated from spectroscopic ellipsometry data, transmittance spectra and reflectance spectra by WVASE32 software, and the best fitted method is obtained for calculating optical constants of dielectric materials in the ultraviolet-visible-infrared (UV-VIS-IR) range. In the UV-VIS-NIR spectral range, refractive indices of SiO2 films are calculated separately by both ellipsometry data and reflectance spectra, and the obtained results are almost the same. Complex dielectric functions of SiO 2 films in the IR spectral range are accurately calculated with infrared transmission spectra using the GenOsc model. The obtained accuracy complex refractive index of SiO2 films in the wavelength region from 0.19 μm to 25 μm is of great importance for the design of high quality coatings, such as ultra-low loss coating.",

author = "Ji, \{Yi Qin\} and Jiang, \{Yu Gang\} and Liu, \{Hua Song\} and Wang, \{Li Shuan\} and Liu, \{Dan Dan\} and Jiang, \{Cheng Hui\} and Fan, \{Rong Wei\} and Chen, \{De Ying\}",

year = "2014",

month = apr,

doi = "10.1088/0256-307X/31/4/046401",

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volume = "31",

journal = "Chinese Physics Letters",

issn = "0256-307X",

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TY - JOUR

T1 - Optical constants of SiO2 films deposited on Si substrates

AU - Ji, Yi Qin

AU - Jiang, Yu Gang

AU - Liu, Hua Song

AU - Wang, Li Shuan

AU - Liu, Dan Dan

AU - Jiang, Cheng Hui

AU - Fan, Rong Wei

AU - Chen, De Ying

PY - 2014/4

Y1 - 2014/4

N2 - SiO2 films were deposited on single-crystalline silicon substrates by ion beam sputtering technology. Optical constants of SiO 2 films are calculated from spectroscopic ellipsometry data, transmittance spectra and reflectance spectra by WVASE32 software, and the best fitted method is obtained for calculating optical constants of dielectric materials in the ultraviolet-visible-infrared (UV-VIS-IR) range. In the UV-VIS-NIR spectral range, refractive indices of SiO2 films are calculated separately by both ellipsometry data and reflectance spectra, and the obtained results are almost the same. Complex dielectric functions of SiO 2 films in the IR spectral range are accurately calculated with infrared transmission spectra using the GenOsc model. The obtained accuracy complex refractive index of SiO2 films in the wavelength region from 0.19 μm to 25 μm is of great importance for the design of high quality coatings, such as ultra-low loss coating.

AB - SiO2 films were deposited on single-crystalline silicon substrates by ion beam sputtering technology. Optical constants of SiO 2 films are calculated from spectroscopic ellipsometry data, transmittance spectra and reflectance spectra by WVASE32 software, and the best fitted method is obtained for calculating optical constants of dielectric materials in the ultraviolet-visible-infrared (UV-VIS-IR) range. In the UV-VIS-NIR spectral range, refractive indices of SiO2 films are calculated separately by both ellipsometry data and reflectance spectra, and the obtained results are almost the same. Complex dielectric functions of SiO 2 films in the IR spectral range are accurately calculated with infrared transmission spectra using the GenOsc model. The obtained accuracy complex refractive index of SiO2 films in the wavelength region from 0.19 μm to 25 μm is of great importance for the design of high quality coatings, such as ultra-low loss coating.

UR - https://www.scopus.com/pages/publications/84898434179

U2 - 10.1088/0256-307X/31/4/046401

DO - 10.1088/0256-307X/31/4/046401

M3 - 文章

AN - SCOPUS:84898434179

SN - 0256-307X

VL - 31

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 4

M1 - 046401

ER -

Optical constants of SiO₂ films deposited on Si substrates

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