Abstract
Alumina films are fabricated on Kapton polymer by aluminum plasma immersion ion implantation and deposition in an oxidizing ambient and the effects of the bias voltage on the film properties are investigated. Rutherford backscattering spectrometry (RBS) reveals successful deposition of alumina films on the polymer surface and that the O to Al ratio is higher than that of stoichiometric Al 2 O 3 . The thickness of the modified layers decreases from 200 to 120 nm when the bias voltage is increased from 5 to 20 kV. Our results indicate that higher bombardment energy may lead to higher crack resistance and better film adhesion. However, a higher sample bias degrades the optical properties of the films as indicated by the higher absorbance and lower energy band gap. Therefore, the processing voltage must be optimized to yield a protective layer with the appropriate thickness, superior optical properties, as well as high crack resistance.
| Original language | English |
|---|---|
| Pages (from-to) | 9483-9488 |
| Number of pages | 6 |
| Journal | Applied Surface Science |
| Volume | 253 |
| Issue number | 24 |
| DOIs | |
| State | Published - 15 Oct 2007 |
| Externally published | Yes |
Keywords
- Alumina films
- Crack resistance
- Optical properties
- Plasma immersion ion implantation and deposition
- Rutherford backscattering spectrometry
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