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Opacity studies of silicon in radiatively heated plasma

  • H. G. Wei
  • , J. R. Shi
  • , G. Zhao
  • , Yi Zhang
  • , Quan Li Dong
  • , Yu Tong Li
  • , Shou Jun Wang
  • , Jie Zhang
  • , Zuotang Liang
  • , Ji Yan Zhang
  • , Tian Shu Wen
  • , Wen Hai Zhang
  • , Xin Hu
  • , Shen Ye Liu
  • , Yong Kun Ding
  • , Lin Zhang
  • , Yong Jian Tang
  • , Bao Han Zhang
  • , Zhi Jian Zheng
  • , Hiroaki Nishimura
  • Shinsuke Fujioka, Fei Lu Wang, Hideaki Takabe
  • CAS - National Astronomical Observatories
  • Shandong University
  • CAS - Institute of Physics
  • Shanghai Jiao Tong University
  • China Academy of Engineering Physics
  • The University of Osaka

Research output: Contribution to journalArticlepeer-review

Abstract

Measurements of the opacity of silicon at high temperature and high density are reported. A silicon dioxide foam was heated by eight nanosecond laser beams while a backlighter X-ray source was produced with a picosecond laser. Absorptions of the 1-2 transitions of Si XII through Si VI were observed in the wavelength range from 6.6 to 7.1 Å. The experimental results are simulated with theoretical calculations under local thermodynamic equilibrium using a detailed level accounting model and can be reproduced in general when the effects of the oxygen in the SiO2 are taken into account.

Original languageEnglish
Pages (from-to)577-583
Number of pages7
JournalAstrophysical Journal
Volume683
Issue number1
DOIs
StatePublished - 10 Aug 2008
Externally publishedYes

Keywords

  • Atomic data
  • Methods: laboratory
  • Plasmas
  • X-rays: general

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