Numerical simulation of avalanche breakdown in the GaAs MESFET

L. N. Akhramovich; S. A. Zuev; V. V. Starostenko; V. Yu Tereshchenko; G. I. Churyumov; D. A. Unzhakov; Ye V. Grigor'Ev

doi:10.1615/TelecomRadEng.v67.i7.80

Numerical simulation of avalanche breakdown in the GaAs MESFET

L. N. Akhramovich
, S. A. Zuev
, V. V. Starostenko
, V. Yu Tereshchenko
, G. I. Churyumov
, D. A. Unzhakov
, Ye V. Grigor'Ev

Tavriya National University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Paper is devoted to the numerical simulation of the occurence and growth processes of an avalanche breakdown in the GaAs MESFET in accordance with the electrical regimes and the active-region geometry.

Original language	English
Pages (from-to)	655-661
Number of pages	7
Journal	Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)
Volume	67
Issue number	7
DOIs	https://doi.org/10.1615/TelecomRadEng.v67.i7.80
State	Published - 2008
Externally published	Yes

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10.1615/TelecomRadEng.v67.i7.80

Cite this

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title = "Numerical simulation of avalanche breakdown in the GaAs MESFET",

abstract = "Paper is devoted to the numerical simulation of the occurence and growth processes of an avalanche breakdown in the GaAs MESFET in accordance with the electrical regimes and the active-region geometry.",

author = "Akhramovich, \{L. N.\} and Zuev, \{S. A.\} and Starostenko, \{V. V.\} and Tereshchenko, \{V. Yu\} and Churyumov, \{G. I.\} and Unzhakov, \{D. A.\} and Grigor'Ev, \{Ye V.\}",

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doi = "10.1615/TelecomRadEng.v67.i7.80",

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AU - Akhramovich, L. N.

AU - Zuev, S. A.

AU - Starostenko, V. V.

AU - Tereshchenko, V. Yu

AU - Churyumov, G. I.

AU - Unzhakov, D. A.

AU - Grigor'Ev, Ye V.

PY - 2008

Y1 - 2008

N2 - Paper is devoted to the numerical simulation of the occurence and growth processes of an avalanche breakdown in the GaAs MESFET in accordance with the electrical regimes and the active-region geometry.

AB - Paper is devoted to the numerical simulation of the occurence and growth processes of an avalanche breakdown in the GaAs MESFET in accordance with the electrical regimes and the active-region geometry.

UR - https://www.scopus.com/pages/publications/44249123575

U2 - 10.1615/TelecomRadEng.v67.i7.80

DO - 10.1615/TelecomRadEng.v67.i7.80

M3 - 文章

AN - SCOPUS:44249123575

SN - 0040-2508

VL - 67

SP - 655

EP - 661

JO - Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)

JF - Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)

IS - 7

ER -

Numerical simulation of avalanche breakdown in the GaAs MESFET

Abstract

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