Nucleation and growth dynamics of diamond films by microwave plasma-enhanced chemical vapor deposition (MPECVD)

Haitao Ye; Chang Q. Sun; Peter Hing; Hong Xie; Sam Zhang; Jun Wei

doi:10.1016/S0257-8972(99)00527-7

Nucleation and growth dynamics of diamond films by microwave plasma-enhanced chemical vapor deposition (MPECVD)

Haitao Ye^*
, Chang Q. Sun
, Peter Hing
, Hong Xie
, Sam Zhang
, Jun Wei

^*Corresponding author for this work

Temasek Polytechnic
Agency for Science, Technology and Research, Singapore

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Diamond thin films of about 10μm thickness have been successfully deposited on silicon (001) substrates by means of microwave plasma-enhanced CVD (MPECVD) system. Preliminary results indicate that a two-stage growth method is necessary for high nuclei density and crystal quality. Optimum processing conditions were obtained by orthogonal experiments, which predict that the total pressure is the most significant parameter. Diamond films were characterized morphologically and structurally by scanning electron microscopy, Raman spectroscopy and X-ray diffraction, etc.

Original language	English
Pages (from-to)	129-133
Number of pages	5
Journal	Surface and Coatings Technology
Volume	123
Issue number	2-3
DOIs	https://doi.org/10.1016/S0257-8972(99)00527-7
State	Published - 24 Jan 2000
Externally published	Yes

Keywords

CVD
Diamond
Dynamics
Nucleation
Plasma

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10.1016/S0257-8972(99)00527-7

Cite this

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title = "Nucleation and growth dynamics of diamond films by microwave plasma-enhanced chemical vapor deposition (MPECVD)",

abstract = "Diamond thin films of about 10μm thickness have been successfully deposited on silicon (001) substrates by means of microwave plasma-enhanced CVD (MPECVD) system. Preliminary results indicate that a two-stage growth method is necessary for high nuclei density and crystal quality. Optimum processing conditions were obtained by orthogonal experiments, which predict that the total pressure is the most significant parameter. Diamond films were characterized morphologically and structurally by scanning electron microscopy, Raman spectroscopy and X-ray diffraction, etc.",

keywords = "CVD, Diamond, Dynamics, Nucleation, Plasma",

author = "Haitao Ye and Sun, \{Chang Q.\} and Peter Hing and Hong Xie and Sam Zhang and Jun Wei",

year = "2000",

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doi = "10.1016/S0257-8972(99)00527-7",

language = "英语",

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journal = "Surface and Coatings Technology",

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T1 - Nucleation and growth dynamics of diamond films by microwave plasma-enhanced chemical vapor deposition (MPECVD)

AU - Ye, Haitao

AU - Sun, Chang Q.

AU - Hing, Peter

AU - Xie, Hong

AU - Zhang, Sam

AU - Wei, Jun

PY - 2000/1/24

Y1 - 2000/1/24

N2 - Diamond thin films of about 10μm thickness have been successfully deposited on silicon (001) substrates by means of microwave plasma-enhanced CVD (MPECVD) system. Preliminary results indicate that a two-stage growth method is necessary for high nuclei density and crystal quality. Optimum processing conditions were obtained by orthogonal experiments, which predict that the total pressure is the most significant parameter. Diamond films were characterized morphologically and structurally by scanning electron microscopy, Raman spectroscopy and X-ray diffraction, etc.

AB - Diamond thin films of about 10μm thickness have been successfully deposited on silicon (001) substrates by means of microwave plasma-enhanced CVD (MPECVD) system. Preliminary results indicate that a two-stage growth method is necessary for high nuclei density and crystal quality. Optimum processing conditions were obtained by orthogonal experiments, which predict that the total pressure is the most significant parameter. Diamond films were characterized morphologically and structurally by scanning electron microscopy, Raman spectroscopy and X-ray diffraction, etc.

KW - CVD

KW - Diamond

KW - Dynamics

KW - Nucleation

KW - Plasma

UR - https://www.scopus.com/pages/publications/0033904830

U2 - 10.1016/S0257-8972(99)00527-7

DO - 10.1016/S0257-8972(99)00527-7

M3 - 文章

AN - SCOPUS:0033904830

SN - 0257-8972

VL - 123

SP - 129

EP - 133

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 2-3

ER -

Nucleation and growth dynamics of diamond films by microwave plasma-enhanced chemical vapor deposition (MPECVD)

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Keywords

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