Novel power supplies for plasma implantation by direct coupling of RF and 40 kV pulsed voltages

A novel type of power supply for the plasma immersion ion implantation (PIII) system, capable of direct coupling of the RF pulsed-voltage and the pulses with amplitude up to 40 kV, has been successfully developed by integrating high voltage insulation and low pass filtering technologies. Electrically connected to the target via a single feed-through, the newly-developed power supply may generate RF pulses and high voltage pulses in an alternating way. The RF pulse for generating the plasma and the high voltage pulse for ion immersion and ion implantation are modulated by the time control unit. The specifications of the power supply include: peak voltage of 10~40 kV, pulse frequency of 1~1000 Hz, power of 6 kW; RF pulse width of 0.01~10 ms, RF power of 1 kW, and the mode switching time interval of 0.01~10 ms. The power supply was experimentally tested with satisfactory results. The design considerations, technical specifications, circuitry, and parts geometry of the power supply were also discussed.