TY - GEN
T1 - Novel method for failure prognostics of power MOSFET
AU - Zhao, Min
AU - Zhang, Donglai
AU - Zhou, Zhicheng
AU - Li, Tiecai
AU - Wang, Zicai
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/14
Y1 - 2015/7/14
N2 - Switched mode power supplies have become ubiquitous in electronic modules and systems. From converting power types, power levels, or driving actuators, these power converters embody varying topologies but usually have high switching rates of up to 500 kHz, power devices such as MOSFETs, microelectronic components and a mix of passive components that store and release energy. They are complex modules that have an unfortunate history of observed high failure rates, yet they may be required to support critical systems. MOSFET plays an increasingly important role in energy conversion and application, it is also the weakest link in the SMPS systems, so that power MOSFET could be used for prognostics of the SMPS. In this paper, a novel method for prognosis of power MOSFET is introduced with the measurement of the timing delay between the Gate-Source and Drain-Source, the time delay will increase with the usage of power MOSFET, as the threshold voltage shifts, also the capacitor of the gate-source increase, which could be measured with the proposed method, the prognostics of MOSFET could be easily implemented.
AB - Switched mode power supplies have become ubiquitous in electronic modules and systems. From converting power types, power levels, or driving actuators, these power converters embody varying topologies but usually have high switching rates of up to 500 kHz, power devices such as MOSFETs, microelectronic components and a mix of passive components that store and release energy. They are complex modules that have an unfortunate history of observed high failure rates, yet they may be required to support critical systems. MOSFET plays an increasingly important role in energy conversion and application, it is also the weakest link in the SMPS systems, so that power MOSFET could be used for prognostics of the SMPS. In this paper, a novel method for prognosis of power MOSFET is introduced with the measurement of the timing delay between the Gate-Source and Drain-Source, the time delay will increase with the usage of power MOSFET, as the threshold voltage shifts, also the capacitor of the gate-source increase, which could be measured with the proposed method, the prognostics of MOSFET could be easily implemented.
KW - Aging
KW - Degradation
KW - Diagnostics
KW - Highly accelerated life test
KW - Power MOSFET
KW - Prognostics and health management
UR - https://www.scopus.com/pages/publications/84943177179
U2 - 10.1109/CIVEMSA.2015.7158628
DO - 10.1109/CIVEMSA.2015.7158628
M3 - 会议稿件
AN - SCOPUS:84943177179
T3 - 2015 IEEE International Conference on Computational Intelligence and Virtual Environments for Measurement Systems and Applications, CIVEMSA 2015
BT - 2015 IEEE International Conference on Computational Intelligence and Virtual Environments for Measurement Systems and Applications, CIVEMSA 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 IEEE International Conference on Computational Intelligence and Virtual Environments for Measurement Systems and Applications, CIVEMSA 2015
Y2 - 12 June 2015 through 14 June 2015
ER -