Novel approach to harmonic control for Class F power amplifier with high power added efficiency

Boshi Jin; Qun Wu; Guohui Yang; Bumman Kim

Novel approach to harmonic control for Class F power amplifier with high power added efficiency

Boshi Jin^*
, Qun Wu
, Guohui Yang
, Bumman Kim

^*Corresponding author for this work

School of Electronics and Information Engineering, Harbin Institute of Technology
Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (R_ON) effect. The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are analyzed using Fourier series analysis method. Considering the on-resistance effect, the formulas of the efficiency, output power, dc power dissipation, and fundamental load impedance are given from ideal current and voltage waveforms. For experimental verification, we designed and implemented a Class F power amplifier, which operates at 850 MHz using AlGaAs/GaAs Heterostructure FET (HFET) device, and analyzed the measurement results. Test results show that the maximum PAE of 67% can be achieved at 28 dBm output power level.

Original language	English
Pages (from-to)	1176-1179
Number of pages	4
Journal	Yi Qi Yi Biao Xue Bao/Chinese Journal of Scientific Instrument
Volume	28
Issue number	7
State	Published - Jul 2007
Externally published	Yes

Keywords

Class F power amplifier
Harmonic control
On-resistance
Power added efficiency (PAE)

Cite this

@article{d2d1d89f5008441db84105900a028ec5,

title = "Novel approach to harmonic control for Class F power amplifier with high power added efficiency",

abstract = "This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (RON) effect. The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are analyzed using Fourier series analysis method. Considering the on-resistance effect, the formulas of the efficiency, output power, dc power dissipation, and fundamental load impedance are given from ideal current and voltage waveforms. For experimental verification, we designed and implemented a Class F power amplifier, which operates at 850 MHz using AlGaAs/GaAs Heterostructure FET (HFET) device, and analyzed the measurement results. Test results show that the maximum PAE of 67\% can be achieved at 28 dBm output power level.",

keywords = "Class F power amplifier, Harmonic control, On-resistance, Power added efficiency (PAE)",

author = "Boshi Jin and Qun Wu and Guohui Yang and Bumman Kim",

year = "2007",

month = jul,

language = "英语",

volume = "28",

pages = "1176--1179",

journal = "Yi Qi Yi Biao Xue Bao/Chinese Journal of Scientific Instrument",

issn = "0254-3087",

publisher = "Editorial office of Chinese Journal of Scientific Instrument",

number = "7",

}

TY - JOUR

T1 - Novel approach to harmonic control for Class F power amplifier with high power added efficiency

AU - Jin, Boshi

AU - Wu, Qun

AU - Yang, Guohui

AU - Kim, Bumman

PY - 2007/7

Y1 - 2007/7

N2 - This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (RON) effect. The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are analyzed using Fourier series analysis method. Considering the on-resistance effect, the formulas of the efficiency, output power, dc power dissipation, and fundamental load impedance are given from ideal current and voltage waveforms. For experimental verification, we designed and implemented a Class F power amplifier, which operates at 850 MHz using AlGaAs/GaAs Heterostructure FET (HFET) device, and analyzed the measurement results. Test results show that the maximum PAE of 67% can be achieved at 28 dBm output power level.

AB - This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (RON) effect. The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are analyzed using Fourier series analysis method. Considering the on-resistance effect, the formulas of the efficiency, output power, dc power dissipation, and fundamental load impedance are given from ideal current and voltage waveforms. For experimental verification, we designed and implemented a Class F power amplifier, which operates at 850 MHz using AlGaAs/GaAs Heterostructure FET (HFET) device, and analyzed the measurement results. Test results show that the maximum PAE of 67% can be achieved at 28 dBm output power level.

KW - Class F power amplifier

KW - Harmonic control

KW - On-resistance

KW - Power added efficiency (PAE)

UR - https://www.scopus.com/pages/publications/34547640134

M3 - 文章

AN - SCOPUS:34547640134

SN - 0254-3087

VL - 28

SP - 1176

EP - 1179

JO - Yi Qi Yi Biao Xue Bao/Chinese Journal of Scientific Instrument

JF - Yi Qi Yi Biao Xue Bao/Chinese Journal of Scientific Instrument

IS - 7

ER -

Novel approach to harmonic control for Class F power amplifier with high power added efficiency

Abstract

Keywords

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