Near field zone of an integrated circuit exposed to an electromagnetic wave in a waveguide

V. V. Starostenko; S. V. Malishevskiǐ; E. P. Taran; G. I. Churyumov

doi:10.1134/1.1544339

Near field zone of an integrated circuit exposed to an electromagnetic wave in a waveguide

V. V. Starostenko^*
, S. V. Malishevskiǐ
, E. P. Taran
, G. I. Churyumov

^*Corresponding author for this work

Tavriya National University
Kharkiv National University of Radio Electronics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The electromagnetic field distribution in the vicinity of an integrated circuit was calculated based on a numerical solution of the problem of electromagnetic wave diffraction on a model metal-dielectric structure in a waveguide tract. Using the obtained field distributions, it is possible to calculate currents in the microstructural elements of integrated circuits and develop a thermoelectric model of degradation processes in such circuits under the action of pulsed electromagnetic fields.

Original language	English
Pages (from-to)	29-31
Number of pages	3
Journal	Technical Physics Letters
Volume	29
Issue number	1
DOIs	https://doi.org/10.1134/1.1544339
State	Published - 1 Jan 2003
Externally published	Yes

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title = "Near field zone of an integrated circuit exposed to an electromagnetic wave in a waveguide",

abstract = "The electromagnetic field distribution in the vicinity of an integrated circuit was calculated based on a numerical solution of the problem of electromagnetic wave diffraction on a model metal-dielectric structure in a waveguide tract. Using the obtained field distributions, it is possible to calculate currents in the microstructural elements of integrated circuits and develop a thermoelectric model of degradation processes in such circuits under the action of pulsed electromagnetic fields.",

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AU - Starostenko, V. V.

AU - Malishevskiǐ, S. V.

AU - Taran, E. P.

AU - Churyumov, G. I.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - The electromagnetic field distribution in the vicinity of an integrated circuit was calculated based on a numerical solution of the problem of electromagnetic wave diffraction on a model metal-dielectric structure in a waveguide tract. Using the obtained field distributions, it is possible to calculate currents in the microstructural elements of integrated circuits and develop a thermoelectric model of degradation processes in such circuits under the action of pulsed electromagnetic fields.

AB - The electromagnetic field distribution in the vicinity of an integrated circuit was calculated based on a numerical solution of the problem of electromagnetic wave diffraction on a model metal-dielectric structure in a waveguide tract. Using the obtained field distributions, it is possible to calculate currents in the microstructural elements of integrated circuits and develop a thermoelectric model of degradation processes in such circuits under the action of pulsed electromagnetic fields.

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DO - 10.1134/1.1544339

M3 - 文章

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Near field zone of an integrated circuit exposed to an electromagnetic wave in a waveguide

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