Nd-substituted SrBi2Ta2O9 ferroelectric thin films prepared by radio frequency magnetron sputtering

Yibin Li; Sam Zhang; Weidong Fei; Thirumany Sritharan; Cong Xu

doi:10.1016/j.tsf.2007.04.032

Nd-substituted SrBi₂Ta₂O₉ ferroelectric thin films prepared by radio frequency magnetron sputtering

Yibin Li
, Sam Zhang^*
, Weidong Fei
, Thirumany Sritharan
, Cong Xu

^*Corresponding author for this work

Nanyang Technological University
Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Nd-substituted SrBi₂Ta₂O₉ (SNBT) thin films are sputtered on Pt/Ta/SiO₂/Si substrates. X-ray diffraction and x-ray photoelectron spectroscopy studies indicate that Nd³⁺ is substituted into the bismuth layered perovskite structure, preferentially at the Sr²⁺ site. The annealed thin film is polycrystalline with plate/needle-like grain microstructure. Secondary ion mass spectrometry results show that elements in SNBT thin film homogeneously distribute along film depth and interfacial diffusion takes place during post annealing. The Nd substitution leads to enhanced remnant polarization (2P_r = 18 μC/cm²) and reduced coercivity (2E_c = 64 kV/cm) at 180 kV/cm measured at 25 °C. After 10¹⁰ switching cycles, around 9% remnant polarization is decreased.

Original language	English
Pages (from-to)	8371-8375
Number of pages	5
Journal	Thin Solid Films
Volume	515
Issue number	23
DOIs	https://doi.org/10.1016/j.tsf.2007.04.032
State	Published - 14 Sep 2007
Externally published	Yes

Keywords

Coercivity
Magnetron sputtering
Remnant polarization
SBT thin film
Substitution

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10.1016/j.tsf.2007.04.032

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title = "Nd-substituted SrBi2Ta2O9 ferroelectric thin films prepared by radio frequency magnetron sputtering",

abstract = "Nd-substituted SrBi2Ta2O9 (SNBT) thin films are sputtered on Pt/Ta/SiO2/Si substrates. X-ray diffraction and x-ray photoelectron spectroscopy studies indicate that Nd3+ is substituted into the bismuth layered perovskite structure, preferentially at the Sr2+ site. The annealed thin film is polycrystalline with plate/needle-like grain microstructure. Secondary ion mass spectrometry results show that elements in SNBT thin film homogeneously distribute along film depth and interfacial diffusion takes place during post annealing. The Nd substitution leads to enhanced remnant polarization (2Pr = 18 μC/cm2) and reduced coercivity (2Ec = 64 kV/cm) at 180 kV/cm measured at 25 °C. After 1010 switching cycles, around 9\% remnant polarization is decreased.",

keywords = "Coercivity, Magnetron sputtering, Remnant polarization, SBT thin film, Substitution",

author = "Yibin Li and Sam Zhang and Weidong Fei and Thirumany Sritharan and Cong Xu",

year = "2007",

month = sep,

day = "14",

doi = "10.1016/j.tsf.2007.04.032",

language = "英语",

volume = "515",

pages = "8371--8375",

journal = "Thin Solid Films",

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publisher = "Elsevier B.V.",

number = "23",

}

TY - JOUR

T1 - Nd-substituted SrBi2Ta2O9 ferroelectric thin films prepared by radio frequency magnetron sputtering

AU - Li, Yibin

AU - Zhang, Sam

AU - Fei, Weidong

AU - Sritharan, Thirumany

AU - Xu, Cong

PY - 2007/9/14

Y1 - 2007/9/14

N2 - Nd-substituted SrBi2Ta2O9 (SNBT) thin films are sputtered on Pt/Ta/SiO2/Si substrates. X-ray diffraction and x-ray photoelectron spectroscopy studies indicate that Nd3+ is substituted into the bismuth layered perovskite structure, preferentially at the Sr2+ site. The annealed thin film is polycrystalline with plate/needle-like grain microstructure. Secondary ion mass spectrometry results show that elements in SNBT thin film homogeneously distribute along film depth and interfacial diffusion takes place during post annealing. The Nd substitution leads to enhanced remnant polarization (2Pr = 18 μC/cm2) and reduced coercivity (2Ec = 64 kV/cm) at 180 kV/cm measured at 25 °C. After 1010 switching cycles, around 9% remnant polarization is decreased.

AB - Nd-substituted SrBi2Ta2O9 (SNBT) thin films are sputtered on Pt/Ta/SiO2/Si substrates. X-ray diffraction and x-ray photoelectron spectroscopy studies indicate that Nd3+ is substituted into the bismuth layered perovskite structure, preferentially at the Sr2+ site. The annealed thin film is polycrystalline with plate/needle-like grain microstructure. Secondary ion mass spectrometry results show that elements in SNBT thin film homogeneously distribute along film depth and interfacial diffusion takes place during post annealing. The Nd substitution leads to enhanced remnant polarization (2Pr = 18 μC/cm2) and reduced coercivity (2Ec = 64 kV/cm) at 180 kV/cm measured at 25 °C. After 1010 switching cycles, around 9% remnant polarization is decreased.

KW - Coercivity

KW - Magnetron sputtering

KW - Remnant polarization

KW - SBT thin film

KW - Substitution

UR - https://www.scopus.com/pages/publications/34548636720

U2 - 10.1016/j.tsf.2007.04.032

DO - 10.1016/j.tsf.2007.04.032

M3 - 文章

AN - SCOPUS:34548636720

SN - 0040-6090

VL - 515

SP - 8371

EP - 8375

JO - Thin Solid Films

JF - Thin Solid Films

IS - 23

ER -

Nd-substituted SrBi₂Ta₂O₉ ferroelectric thin films prepared by radio frequency magnetron sputtering

Abstract

Keywords

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