Abstract
Abrupt metal-to-insulator transition at the polar (e.g., LaAlO3) and nonpolar oxide (e.g., SrTiO3) heterointerfaces is fascinating. In the vicinity of the metal-to-insulator transition critical thickness where the exact critical thickness is found to be 3.65 ± 0.05 uc, strain, carrier concentration, and Kondo induced scattering manifest their great sensitive role on carrier mobility in LaAlO3/SrTiO3 interfaces.
| Original language | English |
|---|---|
| Article number | 1400437 |
| Journal | Advanced Materials Interfaces |
| Volume | 2 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1 Jan 2015 |
| Externally published | Yes |
Keywords
- Kondo effect
- LaAlO/SrTiO interfaces
- metal-insulator transition
- mobility
- strain
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