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Nature of Electron Scattering in LaAlO3/SrTiO3 Interfaces Near the Critical Thickness

  • C. J. Li
  • , W. M. Lü*
  • , X. Renshaw Wang
  • , X. P. Qiu
  • , L. Sun
  • , S. W. Zeng
  • , Z. Q. Liu
  • , Z. Huang
  • , Y. L. Zhao
  • , Ariando
  • , T. Venkatesan
  • *Corresponding author for this work
  • National University of Singapore
  • University of Twente

Research output: Contribution to journalArticlepeer-review

Abstract

Abrupt metal-to-insulator transition at the polar (e.g., LaAlO3) and nonpolar oxide (e.g., SrTiO3) heterointerfaces is fascinating. In the vicinity of the metal-to-insulator transition critical thickness where the exact critical thickness is found to be 3.65 ± 0.05 uc, strain, carrier concentration, and Kondo induced scattering manifest their great sensitive role on carrier mobility in LaAlO3/SrTiO3 interfaces.

Original languageEnglish
Article number1400437
JournalAdvanced Materials Interfaces
Volume2
Issue number1
DOIs
StatePublished - 1 Jan 2015
Externally publishedYes

Keywords

  • Kondo effect
  • LaAlO/SrTiO interfaces
  • metal-insulator transition
  • mobility
  • strain

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